Dynamic hvpe of compositionally graded buffer layers
US-2024084479-A1 · Mar 14, 2024 · US
US9159554B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9159554-B2 |
| Application number | US-201414262400-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2014 |
| Priority date | May 1, 2013 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
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Official abstract text for this publication.
Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.
Opening claim text (preview).
The invention claimed is: 1. A method of forming a device structure, comprising: providing a substrate having a surface oriented in a <111> direction; forming a trench having a first region and a second region, wherein a width of the first region corresponds to a width of the surface oriented in a <111> direction, the trench comprising sidewalls, wherein the sidewalls contact the substrate below the surface oriented in a <111> direction; depositing a first layer on the surface…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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