Semiconductor structure and method for manufacturing semiconductor structure
US-12046478-B2 · Jul 23, 2024 · US
Etching method
US8993449B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993449-B2 |
| Application number | US-201013386213-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 12, 2010 |
| Priority date | Aug 14, 2009 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.
First claim
Opening claim text (preview).
What is claimed is: 1. An etching method for trenches or via holes having high aspect ratio by an NLD type etching apparatus in which a plasma is generated in a processing chamber by radio frequency antenna coils to etch a to-be-processed object made of silicon on a substrate electrode disposed in the processing chamber, the etching method comprising: a hydrogen halide-containing gas-based etching step of etching the to-be-processed object by introducing a hydrogen halide-containi…
Assignees
Inventors
Classifications
- H10P50/244Primary
Electricity · mapped topic
- H10P50/242Primary
Electricity · mapped topic
- H01L21/30655Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8993449B2 cover?
- There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching …
- Who is the assignee on this patent?
- Morikawa Yasuhiro, Suu Koukou, Ulvac Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P50/244. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).