Memristive devices with layered junctions and methods for fabricating the same
US-2015380464-A1 · Dec 31, 2015 · US
Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same
US8993441B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993441-B2 |
| Application number | US-201414189053-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 25, 2014 |
| Priority date | Mar 13, 2013 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
Official abstract text for this publication.
A method of forming a thin layer and a method of manufacturing a phase change memory device, the method of forming a thin layer including providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by following the Formula 2: Te(CH(CH 3 ) 2 ) 2 Formula 1 Te n (CH(CH 3 ) 2 ) 2 Formula 2 wherein, in Formula 2, n is an integer greater than or equal to 2.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a thin layer, the method comprising: providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by the following Formula 2: Te(CH(CH 3 ) 2 ) 2 Formula 1 Te n (CH(CH 3 ) 2…
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Electricity · mapped topic
Electricity · mapped topic
- H01L45/1616Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993441B2 cover?
- A method of forming a thin layer and a method of manufacturing a phase change memory device, the method of forming a thin layer including providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the follo…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1616. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).