Rram device
US-2016351806-A1 · Dec 1, 2016 · US
Compact localized RRAM cell structure realized by spacer technology
US8993407B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8993407-B2 |
| Application number | US-201213683779-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 21, 2012 |
| Priority date | Nov 21, 2012 |
| Publication date | Mar 31, 2015 |
| Grant date | Mar 31, 2015 |
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Abstract
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An RRAM is disclosed with a vertical BJT selector. Embodiments include defining a STI region in a substrate, implanting dopants in the substrate to form a first polarity well around and below a bottom portion of the STI region, a second polarity channel over the well on opposite sides of the STI region, and a first polarity active area over each channel at the surface of the substrate, forming an RRAM liner on the active area and STI region, forming a sacrificial top electrode on the RRAM liner, forming spacers on opposite sides of the sacrificial top electrode, implanting a second polarity dopant in the active area on opposite sides of the sacrificial top electrode, forming a silicon oxide adjacent the spacers, removing at least a portion of the sacrificial top electrode forming a cavity, forming in the cavity inner spacers adjacent the spacers and a top electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: defining a shallow trench isolation (STI) region in a substrate; implanting dopants in the substrate to form a well of a first polarity around and below a bottom portion of the STI region, a channel of a second polarity over the well on opposite sides of the STI region, and an active area of the first polarity over each channel of second polarity at the surface of the substrate; forming an RRAM liner on the active area and STI region…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8993407B2 cover?
- An RRAM is disclosed with a vertical BJT selector. Embodiments include defining a STI region in a substrate, implanting dopants in the substrate to form a first polarity well around and below a bottom portion of the STI region, a second polarity channel over the well on opposite sides of the STI region, and a first polarity active area over each channel at the surface of the substrate, forming …
- Who is the assignee on this patent?
- Tan Shyue Seng, Toh Eng Huat, Quek Elgin, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1691. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).