Memory elements using self-aligned phase change material layers and methods of manufacturing same

Patent metadata

Field	Value
Publication number	US-9178141-B2
Application number	US-201414149045-A
Country	US
Kind code	B2
Filing date	Jan 7, 2014
Priority date	Apr 4, 2006
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A memory element comprising:
a first dielectric material having a via therein;
a first electrode within the via;
an insulating material element positioned over and in contact with the first electrode;
a phase change material positioned over the first electrode and in contact with sidewalls of the insulating material element, the phase change material having a first surface in con…

Assignees

• Micron Technology Inc

Inventors

• Liu Jun

Classifications

• H01L45/04

  Electricity · mapped topic

• H01L45/124 Primary

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L27/2463

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic