Semiconductor device and method of bonding different size semiconductor die at the wafer level

US8993377B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8993377-B2
Application numberUS-201113231839-A
CountryUS
Kind codeB2
Filing dateSep 13, 2011
Priority dateSep 29, 2010
Publication dateMar 31, 2015
Grant dateMar 31, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.

First claim

Opening claim text (preview).

What is claimed: 1. A method of making a semiconductor device, comprising: providing a semiconductor wafer including an active surface and a second surface opposite the active surface; forming a plurality of conductive vias partially through the active surface of the semiconductor wafer; singulating the semiconductor wafer to separate a first semiconductor die; disposing a second semiconductor die over the first semiconductor die with the active surface oriented toward the s…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8993377B2 cover?
A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the seco…
Who is the assignee on this patent?
Koo Jun Mo, Marimuthu Pandi C, Yoon Seung Wook, and 2 more
What technology area does this patent fall under?
Primary CPC classification H10W74/014. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 31 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).