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Selectively conducting devices, diode constructions, constructions, and diode forming methods
US8987702B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8987702-B2 |
| Application number | US-4054608-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 29, 2008 |
| Priority date | May 1, 2007 |
| Publication date | Mar 24, 2015 |
| Grant date | Mar 24, 2015 |
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Abstract
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Some embodiments include selectively conducting devices having a first electrode, a second electrode, and dielectric material between the first and second electrodes. The dielectric material may be configured to conduct current from the first electrode to the second electrode when a first voltage is applied across the first electrode and the second electrode. Furthermore, the dielectric material may be configured to inhibit current from flowing from the second electrode to the first electrode when a second voltage having a polarity opposite that of a polarity of the first voltage is applied across the first electrode and the second electrode. The diode material may comprise a plurality of layers of different dielectric materials arranged in order of increasing barrier height. Quantum wells may form at junctions of layers of the plurality responsive to the first voltage. Some embodiments include diode forming methods.
First claim
Opening claim text (preview).
The invention claimed is: 1. A selectively conducting device comprising: a horizontal first electrode comprising a first metal-comprising material having a first work function; a horizontal second electrode comprising a second metal comprising material comprising a second work function, the first and second work functions being non-equivalent; a plurality of at least three stacked un-doped dielectric materials selected from the group consisting of silicon dioxide, silicon nitr…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- G11C13/0002Primary
Physics · mapped topic
Physics · mapped topic
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Frequently asked questions
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- What does patent US8987702B2 cover?
- Some embodiments include selectively conducting devices having a first electrode, a second electrode, and dielectric material between the first and second electrodes. The dielectric material may be configured to conduct current from the first electrode to the second electrode when a first voltage is applied across the first electrode and the second electrode. Furthermore, the dielectric materia…
- Who is the assignee on this patent?
- Mouli Chandra, Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C13/0002. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).