Resistive-switching memory element

US8980709B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8980709-B2
Application numberUS-201314028281-A
CountryUS
Kind codeB2
Filing dateSep 16, 2013
Priority dateAug 14, 2009
Publication dateMar 17, 2015
Grant dateMar 17, 2015

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Abstract

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A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

First claim

Opening claim text (preview).

What is claimed: 1. A method for forming a nonvolatile memory element, the method comprising: depositing a first electrode on a substrate; depositing a layer on the first electrode using a porogen-containing precursor, wherein the porogen-containing precursor comprises a porogen; exposing the deposited layer to a vapor-based deposition precursor, wherein the vapor-based deposition precursor comprises one of Hf, Ti, Ru, or Ni, wherein, after exposing the deposited layer t…

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What does patent US8980709B2 cover?
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.
Who is the assignee on this patent?
Intermolecular Inc
What technology area does this patent fall under?
Primary CPC classification H01L45/14. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).