Memory device and memory unit
US-2015349025-A1 · Dec 3, 2015 · US
US8980709B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980709-B2 |
| Application number | US-201314028281-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2013 |
| Priority date | Aug 14, 2009 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.
Opening claim text (preview).
What is claimed: 1. A method for forming a nonvolatile memory element, the method comprising: depositing a first electrode on a substrate; depositing a layer on the first electrode using a porogen-containing precursor, wherein the porogen-containing precursor comprises a porogen; exposing the deposited layer to a vapor-based deposition precursor, wherein the vapor-based deposition precursor comprises one of Hf, Ti, Ru, or Ni, wherein, after exposing the deposited layer t…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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