Electronic devices, memory devices and memory arrays

Patent metadata

Field	Value
Publication number	US-8976566-B2
Application number	US-201213710785-A
Country	US
Kind code	B2
Filing date	Dec 11, 2012
Priority date	Sep 29, 2010
Publication date	Mar 10, 2015
Grant date	Mar 10, 2015

Abstract

Some embodiments include electronic devices having two capacitors connected in series. The two capacitors share a common electrode. One of the capacitors includes a region of a semiconductor substrate and a dielectric between such region and the common electrode. The other of the capacitors includes a second electrode and ion conductive material between the second electrode and the common electrode. At least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Some embodiments include memory cells having two capacitors connected in series, and some embodiments include memory arrays containing such memory cells.

First claim

We claim:

1. A memory device, comprising:
a first electrode spaced from an underlying semiconductor substrate by dielectric;
a second electrode over the first electrode, and spaced from the first electrode by ion conductive material; the ion conductive material comprising one or more compositions selected from the group consisting of chalcogenides and oxides;
a pair of source/drain regions extending into the semiconductor substrate adjacent the first electrode, one of the sour…

Assignees

• Micron Technology Inc

Inventors

• Ramaswamy D V Nirmal
• Prall Kirk D

Classifications

• H01L45/142

  Electricity · mapped topic

• H01L45/143

  Electricity · mapped topic

• H01L27/2463

  Electricity · mapped topic

• H01L45/14 Primary

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic