Memristive devices with layered junctions and methods for fabricating the same
US-2015380464-A1 · Dec 31, 2015 · US
Three dimension programmable resistive random accessed memory array with shared bitline and method
US8975609B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975609-B2 |
| Application number | US-201313862353-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 12, 2013 |
| Priority date | Dec 31, 2010 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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A method of forming a non-volatile memory device. A substrate is provided and a first dielectric material forms overlying the substrate. A first polysilicon material is deposited overlying the first dielectric material. A second dielectric material is deposited overlying the first polysilicon material. A second polysilicon material is deposited overlying the second dielectric material. A third dielectric material is formed overlying the second polysilicon material. The third dielectric material, the second polysilicon material, the second dielectric material, and the first polysilicon material is subjected to a first pattern and etch process to form a first wordline associated with a first switching device and a second wordline associated with a second switching device from the first polysilicon material, a third wordline and associated with a third switching device, and a fourth wordline associated with a fourth switching device from the second polysilicon material. A via opening is formed to separate the first wordline from the second wordline and to separate the third wordline from the fourth wordline. An amorphous silicon switching material is deposited conformably overlying the via opening. A metal material fills the via opening and overlies the amorphous silicon material and connected to a common bitline.
First claim
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What is claimed is: 1. A non-volatile memory device; comprising: a substrate having a surface region; a first dielectric material overlying the surface region of the substrate; a first wordline and a second wordline overlying the first dielectric material, the first wordline being associated with a first resistive switching device and the second wordline being associated with a second resistive switching device; a second dielectric material overlying the first wordline and t…
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Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8975609B2 cover?
- A method of forming a non-volatile memory device. A substrate is provided and a first dielectric material forms overlying the substrate. A first polysilicon material is deposited overlying the first dielectric material. A second dielectric material is deposited overlying the first polysilicon material. A second polysilicon material is deposited overlying the second dielectric material. A third …
- Who is the assignee on this patent?
- Crossbar Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L45/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).