Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
Electrostatic chuck and method of manufacturing electrostatic chuck
US8971010B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8971010-B2 |
| Application number | US-201113816050-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 11, 2011 |
| Priority date | Aug 11, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top face of the protrusion is a curved surface, and a first recess is formed in the top face to correspond to crystal grains that appear on the surface. The planar surface part has a flat part, and a second recess is formed in the flat part. A depth dimension of the first recess is greater than a depth dimension of the second recess. The electrostatic chuck can suppress the generation of particles and a method for manufacturing the electrostatic chuck is provided.
First claim
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The invention claimed is: 1. An electrostatic chuck, comprising a dielectric substrate having a protrusion and a planar surface, the protrusion being formed on a major surface of the dielectric substrate, an adsorption target material being mounted on the major surface, the planar surface part being formed in a periphery of the protrusion, the dielectric substrate being formed from a polycrystalline ceramics sintered body, and the major surface having been processed by CMP metho…
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Frequently asked questions
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- What does patent US8971010B2 cover?
- An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top f…
- Who is the assignee on this patent?
- Ishikawa Kaduko, Yonezawa Junji, Aoshima Toshihiro, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P72/70. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).