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Etch rate detection for photomask etching
US8961804B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8961804-B2 |
| Application number | US-201213650930-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 12, 2012 |
| Priority date | Oct 25, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss. In one embodiment, the method includes etching a first substrate through a patterned mask layer in a plasma etch chamber, the first substrate having a backside disposed on a substrate support and a front side facing away from the substrate support, directing a first radiation source from the backside of the first substrate to a first area covered by the patterned mask layer, directing a second radiation source from the backside of the first substrate to a second area uncovered by the patterned mask layer, collecting a first signal reflected from the first area covered by the patterned mask layer, collecting a second signal reflected from the second area uncovered by the patterned mask layer, and analyzing the combined first and the second signal.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of determining a thickness loss of a layer disposed on a substrate during an etching process, comprising: etching a first substrate through a patterned mask layer in a plasma etch chamber, the first substrate having a backside disposed on a substrate support and a front side facing away from the substrate support; directing a first radiation source from the backside of the first substrate to a first area covered by the patterned mask layer;…
Assignees
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Classifications
- H10P74/203Primary
Electricity · mapped topic
- G03F1/80Primary
Physics · mapped topic
- H01L22/12Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8961804B2 cover?
- The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss. In one embodiment, the method includes etching a first substrate through a patterned mask layer in a plasma etch chamber, the first substrate…
- Who is the assignee on this patent?
- Grimbergen Michael N, Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P74/203. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).