Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
US8947883B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8947883-B2 |
| Application number | US-96569107-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2007 |
| Priority date | Dec 27, 2007 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Official abstract text for this publication.
A low profile USB flash memory device, and methods of forming same, are disclosed. The USB flash memory device includes an integrated circuit memory portion and a USB connector. The memory portion and the USB connector may be integrally formed on the same substrate. The USB flash memory device includes a substrate on which is mounted one or more flash memory die, a controller die, passive components and an LED for indicating when the memory is being accessed. In contrast to prior art USB memory devices which used TSOP packages mounted on a printed circuit board, the semiconductor die of the present invention are affixed to the substrate and wire bonded in a SIP configuration. Omitting the encapsulated TSOP packages allows a reduction in the overall thickness of the USB flash memory device.
Opening claim text (preview).
We claim: 1. A USB flash memory device, comprising: a substrate; a conductance pattern defined on a surface of the substrate; USB connector pins formed in the conductance pattern on the substrate for removable insertion into a host device and for electrically coupling the USB flash memory device with the host device when inserted into the host device; one or more semiconductor die, the one or more semiconductor die including die bond pads on an upper surface of the one or mo…
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