Lithographic apparatus and a method of operating the apparatus
US-12072635-B2 · Aug 27, 2024 · US
US8945808B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945808-B2 |
| Application number | US-38073106-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 28, 2006 |
| Priority date | Apr 28, 2006 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
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What is claimed is: 1. A resist composition comprising: a) a photoresist polymer that does not comprise a silsesquioxane polymer; b) at least one photoacid generator; c) a solvent; and d) a resist additive compound including a polymer, oligomer or cage structure having the following structure A: wherein, each Z 1 , Z 2 , and Z 3 independently represents a membe…
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