Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Method of multiple patterning of a low-K dielectric film
US8940642B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940642-B2 |
| Application number | US-201113187304-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2011 |
| Priority date | Jul 20, 2011 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
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Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.
First claim
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What is claimed is: 1. A method of patterning a low-k dielectric film, the method comprising: forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate; forming and patterning a second mask layer above the first patterned mask layer; transferring a pattern of the second patterned mask layer at least partially into the low-k dielectric layer by first exposing and then modifying first portions of the low-k die…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8940642B2 cover?
- Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectri…
- Who is the assignee on this patent?
- Nemani Srinivas D, Zhou Yifeng, Lubomirsky Dmitry, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P50/283. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).