System and methods for controlling an amount of primer in a primer application gas
US-2024379467-A1 · Nov 14, 2024 · US
US8940554B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8940554-B2 |
| Application number | US-201213359970-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2012 |
| Priority date | Oct 22, 2009 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.
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What is claimed: 1. A system, comprising: a measuring device configured to measure thickness of an SOI layer at a plurality of locations; a processor configured to determine a removal thickness at each of the a plurality of locations; an ion implant device configured to implant a species into the SOI layer at each of the plurality of locations, wherein at least one of implantation dose and implantation energy are adjusted based on the removal thickness at each of the plurality…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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