Method of forming a dielectric layer having an ONO structure using an in-situ process

Patent metadata

Field	Value
Publication number	US-8932964-B2
Application number	US-201213444054-A
Country	US
Kind code	B2
Filing date	Apr 11, 2012
Priority date	Jun 29, 2011
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

A method of forming a dielectric layer, the method including sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process, wherein a first nitrogen plasma treatment is performed after forming the first oxide layer.

First claim

What is claimed is:

1. A method of forming a dielectric layer, the method comprising:
sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process, wherein a first nitrogen plasma treatment is performed after forming the first oxide layer such that at least some hydroxide groups on a surface of the first oxide layer are replaced with amino groups; and
performing a second nitrogen plasma treatment on a surface of the nitride layer, after forming the nitride layer,
wherein performing the second nitrogen plasma treatment on a surface of the nitride layer includes removing hydrogen atoms contained in amino groups on the surface of the nitride layer.

2. The method as claimed in claim 1 , wherein forming the first oxide layer, the nitride layer, and the second oxide layer and performing the first nitrogen plasma treatment are performed using an in-situ process.

3. The method as claimed in claim 2 , wherein during forming the first oxide layer, the nitride layer, and the second oxide layer and performing the first nitrogen plasma treatment, the substrate is placed on a susceptor in a chamber and the susceptor is maintained at a constant temperature.

4. The method as claimed in claim 1 , wherein performing the first nitrogen plasma treatment includes performing a nitrogen plasma treatment on the surface of the first oxide layer using a gas containing nitrogen and helium.

5. The method as claimed in claim 1 , wherein:
forming the first and second oxide layers includes supplying first and second silicon precursors and oxidizing the first and second silicon precursors, respectively, by performing an oxygen plasma treatment, and
forming the nitride layer includes supplying a third silicon precursor and nitridating the third silicon precursor by performing a third nitrogen plasma treatment.

6. The method as claimed in claim 5 , wherein the first to third silicon precursors are the same and the first to third silicon precursors have Si—N bonds.

7. The method as claimed in claim 5 , wherein a first power applied to the chamber during the first nitrogen plasma treatment is larger than a second power applied to the chamber during the oxygen plasma treatments and the third nitrogen plasma treatment.

8. The method as claimed in claim 5 , wherein performing the third nitrogen plasma treatment includes nitridating the third silicon precursor using a gas containing nitrogen and hydrogen.

9. A method of forming a dielectric layer, the method comprising:
placing a substrate on a susceptor in a chamber;
sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on the substrate using an in-situ process, wherein the susceptor is maintained at a constant temperature during forming the first oxide layer, the nitride layer, and the second oxide layer;
performing a first nitrogen plasma treatment on a surface of the first oxide layer, after forming the first oxide layer, such that at least some hydroxide groups on the surface of the first oxide layer are replaced with amino groups; and
performing a second nitrogen plasma treatment on a surface of the nitride layer, after forming the nitride layer,
wherein performing the second nitrogen plasma treatment on a surface of the nitride layer includes removing hydrogen atoms contained in amino groups on the surface of the nitride layer.

10. The method as claimed in claim 9 , wherein:
forming the first oxide layer, the nitride layer, and the second oxide layer includes performing a plasma enhanced atomic layer deposition process, and
a first power applied to the chamber during the first nitrogen plasma treatment and the second nitrogen plasma treatment is larger than a second power applied to the chamber to form the first oxide layer, the nitride layer, and the second oxide layer.

11. The method as claimed in claim 9 , wherein:
forming the first and second oxide layers includes supplying first and second silicon precursors and oxidizing the first and second silicon precursors, respectively, by performing oxygen plasma treatments, and
forming the nitride layer includes supplying a third silicon precursor and nitridating the third silicon precursor by performing a third nitrogen plasma treatment.

12. The method as claimed in claim 11 , wherein the first to third silicon precursors are the same and the first to third silicon precursors have Si—N bonds.

13. A method of forming a dielectric layer using an in-situ process, the method comprising:
forming a first oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process;
performing a first nitrogen plasma treatment on the first oxide layer such that at least some hydroxide groups on a surface of the first oxide layer are replaced with amino groups;
forming a nitride layer on the first oxide layer by performing a plasma-enhanced atomic layer deposition process;
forming a second oxide layer on the nitride layer by performing a plasma-enhanced atomic layer deposition process; and
performing a second nitrogen plasma treatment on a surface of the nitride layer, after forming the nitride layer,
wherein performing the second nitrogen plasma treatment on a surface of the nitride layer includes removing hydrogen atoms contained in amino groups on the surface of the nitride layer.

14. The method as claimed in claim 13 , wherein performing the first nitrogen plasma treatment includes performing a nitrogen plasma treatment on the surface of the first oxide layer using a gas containing nitrogen and helium.

15. The method as claimed in claim 13 , wherein:
forming the first oxide layer includes supplying a silicon precursor and oxidizing the silicon precursor by performing an oxygen plasma treatment,
forming the nitride layer includes supplying the silicon precursor and nitridating the precursor by performing a third nitrogen plasma treatment, and
forming the second oxide layer includes supplying the silicon precursor and oxidizing the silicon precursor by performing an oxygen plasma treatment.

16. The method as claimed in claim 15 , wherein performing the third nitrogen plasma treatment includes nitridating the precursor using a gas containing nitrogen and hydrogen.

Assignees

• Lee Woo-Jin
• Park Ji-Soon
• Lee Jong-Myeong
• Lee Hyun-Bae
• Samsung Electronics Co Ltd

Inventors

• Lee Woo-Jin
• Park Ji-Soon
• Lee Jong-Myeong
• Lee Hyun-Bae

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title