SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
Silicon carbide semiconductor device and method for manufacturing same
US9209262B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9209262-B2 |
| Application number | US-201314377379-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2013 |
| Priority date | Dec 27, 2012 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
This silicon carbide semiconductor device includes: a silicon carbide semiconductor layer; a gate insulating layer which is arranged over the silicon carbide semiconductor layer and which includes a silicon oxide film; a gate electrode which is arranged on the gate insulating layer; and a carbon transition layer which is interposed between the silicon carbide semiconductor layer and the silicon oxide film and which has a carbon atom concentration is 10% to 90% of a carbon atom concentration of the silicon carbide semiconductor layer. In a region of the carbon transition layer which is located closer to the silicon oxide film than a position where a nitrogen atom concentration becomes the highest is, a ratio of an integral of nitrogen atom concentrations to an integral of carbon atom concentrations is equal to or greater than 0.11.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for fabricating a silicon carbide semiconductor device, the method comprising the steps of: (a) providing a silicon carbide semiconductor layer; (b) forming a gate insulating layer including a silicon oxide film on the surface of the silicon carbide semiconductor layer, whereby a carbon transition layer, which has a carbon atom concentration is 10% to 90% of a carbon atom concentration of the silicon carbide semiconductor layer, is formed…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/8325Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9209262B2 cover?
- This silicon carbide semiconductor device includes: a silicon carbide semiconductor layer; a gate insulating layer which is arranged over the silicon carbide semiconductor layer and which includes a silicon oxide film; a gate electrode which is arranged on the gate insulating layer; and a carbon transition layer which is interposed between the silicon carbide semiconductor layer and the silicon…
- Who is the assignee on this patent?
- Panasonic Corp, Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D62/8325. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).