Memory with fly-bitlines that work with single-ended sensing and associated memory access method
US-2024233786-A9 · Jul 11, 2024 · US
US8929154B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8929154-B2 |
| Application number | US-201113267235-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 6, 2011 |
| Priority date | Oct 6, 2011 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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A semiconductor structure includes a first strap cell, a first read port, and a first VSS terminal. The first strap cell has a first strap cell VSS region. The first read port has a first read port VSS region, a first read port read bit line region, and a first read port poly region. The first VSS terminal is configured to electrically couple the first strap cell VSS region and the first read port VSS region.
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: a first strap cell having a first strap cell reference voltage (VSS) region; a first read port having a first read port VSS region, a first read port read bit line region, and a first read port poly region; and a first VSS terminal configured to electrically couple the first strap cell VSS region and the first read port VSS region. 2. The semiconductor structure of claim 1 further comprising:…
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