FinFET body contact and method of making same

Patent metadata

Field	Value
Publication number	US-8928093-B2
Application number	US-201414203407-A
Country	US
Kind code	B2
Filing date	Mar 10, 2014
Priority date	Jan 31, 2012
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.

First claim

What is claimed is:

1. A method of forming a semiconductor structure, the method comprising:
forming a semiconductor fin on a substrate;
forming a first gate structure on a top surface and sidewalls of the semiconductor fin;
forming a second gate structure on the top surface and sidewalls of the semiconductor fin, the second gate structure being laterally spaced from the first gate structure;
forming a third gate structure on the top surface and sidewalls of the semiconducto…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Lo Ching-Hsiung
• Lee Jam-Wem
• Lin Wun-Jie
• Tseng Jen-Chou

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D30/024 Primary

  Electricity · mapped topic

• H10D89/60

  Electricity · mapped topic

• H10D89/611 Primary

  Electricity · mapped topic

• H10D64/27

  Electricity · mapped topic