Channel epitaxial regrowth flow (CRF)

Patent metadata

Field	Value
Publication number	US-8927352-B2
Application number	US-201313791040-A
Country	US
Kind code	B2
Filing date	Mar 8, 2013
Priority date	Mar 8, 2013
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a poly wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate. The method further includes thinning the STI oxide and the Si line while maintaining about the same height ratio of the Si line and the STI oxide, and forming a spacer wall adjacent to both sides of the poly wall and further adjacent to Si and STI oxide side walls under the poly wall uncovered due thinning the STI oxide and the Si line.

First claim

What is claimed is:

1. A method for channel epitaxial regrowth flow (CRF), the method comprising:
forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a polycrystalline (poly) wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate;
thinning the STI oxide and the Si line while maintaining about the same height rat…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Fu Ching-Feng
• Hung Shih-Ting
• Chen Hsin-Chih
• Ko Chih-Hsin
• Wann Clement Hsingjen

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D30/024 Primary

  Electricity · mapped topic

• H10D64/017

  Electricity · mapped topic

• H10D62/116

  Electricity · mapped topic

• H10D30/673

  Electricity · mapped topic