Deposition apparatus

Patent metadata

Field	Value
Publication number	US-2026035781-A1
Application number	US-202519090060-A
Country	US
Kind code	A1
Filing date	Mar 25, 2025
Priority date	Aug 1, 2024
Publication date	Feb 5, 2026
Grant date	—

Abstract

A deposition apparatus includes a chamber configured to accommodate a target substrate that is configured to discharge a target material, a deposition substrate on which a deposition layer including the target material is formed, and an electrode substrate in contact with the deposition substrate, a voltage applying device configured to apply a voltage to the target substrate and the electrode substrate, a temperature measurement part configured to measure a temperature of the deposition substrate, a controller configured to calculate at least one of a temperature change rate and an absolute value of the temperature change rate based on a process time through the temperature of the deposition substrate measured in the temperature measurement part, compare the absolute value of the calculated temperature change rate and a preset threshold temperature change rate, control operation of the voltage applying device, and perform a deposition process for forming the deposition layer.

First claim

What is claimed is:

1 . A deposition apparatus comprising:
a chamber configured to accommodate a target substrate that is configured to discharge a target material, a deposition substrate on which a deposition layer including the target material is formed, and an electrode substrate in contact with the deposition substrate; a voltage applying device configured to apply a voltage to the target substrate and the electrode substrate; a temperature measurement part configured to measure a temperature of the deposition substrate; and a controller configured to calculate at least one of a temperature change rate and an absolute value of the temperature change rate based on a process time through the temperature of the deposition substrate measured in the temperature measurement part, compare the absolute value of the calculated temperature change rate and a preset threshold temperature change rate, control operation of the voltage applying device, and perform a deposition process for forming the deposition layer.

2 . The deposition apparatus of claim 1 , wherein the controller is configured to:
when the absolute value of the calculated temperature change rate is greater than the preset threshold temperature change rate, control that the voltage applying device in an operating state applies a voltage with a magnitude reduced or changes to a stop state, or control that the voltage applying device in the stop state maintains the stop state; and when the absolute value of the calculated temperature change rate is equal to or less than the preset threshold temperature change rate, control that the voltage applying device in the stop state changes to the operating state, or control that the voltage applying device in the operating state maintains the operating state.

3 . The deposition apparatus of claim 2 , wherein the controller is configured to, when the absolute value of the calculated temperature change rate is greater than the preset threshold temperature change rate, control that the voltage applying device in the operating state changes to the stop state.

4 . The deposition apparatus of claim 1 , wherein the controller is configured to:
when the absolute value of the calculated temperature change rate is greater than the preset threshold temperature change rate, control that the voltage applying device in the operating state applies a voltage with a magnitude reduced or changes to the stop state, or control that the voltage applying device in the stop state maintains the stop state; and when the absolute value of the calculated temperature change rate is equal to or less than the preset threshold temperature change rate, control that the voltage applying device in the stop state maintains the stop state or changes to the operating state, or control that the voltage applying device in the operating state maintains the operating state or changes to the stop state.

5 . The deposition apparatus of claim 4 , wherein the controller is configured to, when the absolute value of the calculated temperature change rate is greater than the preset threshold temperature change rate, control that the voltage applying device in the operating state changes to the stop state.

6 . The deposition apparatus of claim 4 , wherein the controller is configured to perform a plurality of deposition processes and form the deposition layer having a final target thickness.

7 . The deposition apparatus of claim 6 , wherein, at a start time point when the absolute value of the calculated temperature change rate is equal to the preset threshold temperature change rate, the voltage applying device is in the stop state,
wherein the controller is configured to control that the voltage applying device in the stop state changes to the operating state, or control that the voltage applying device in the stop state maintains the stop state and then changes to the operating state and control that the voltage applying device maintains the operating state until an s-th deposition layer having an s-th thickness is formed while the absolute value of the calculated temperature change rate is equal to or less than the preset threshold temperature change rate, and wherein the s-th deposition layer is a portion of the deposition layer and the s-th thickness is less than the final target thickness.

8 . The deposition apparatus of claim 7 , wherein, after the start time point, at a finish time point when the calculated temperature change rate is a negative number and the absolute value of the calculated temperature change rate is equal to the preset threshold temperature change rate, the voltage applying device is in the stop state,
wherein the controller is configured to control that the voltage applying device in the stop state maintains the stop state and then changes to the operating state and control that the voltage applying device maintains the operating state until an f-th deposition layer having an f-th thickness is formed and the deposition layer having the final target thickness is formed while the absolute value of the calculated temperature change rate is equal to or less than the preset threshold temperature change rate, and wherein the f-th deposition layer is a portion of the deposition layer and the f-th thickness is greater than the s-th thickness.

9 . The deposition apparatus of claim 8 , wherein, between the start time point and the finish time point, at at least one intermediate time point when the calculated temperature change rate is a negative number and the absolute value of the calculated temperature change rate is equal to the preset threshold temperature change rate, the voltage applying device is in the stop state,
wherein the controller is configured to control that the voltage applying device in the stop state maintains the stop state and then changes to the operating state and control that the voltage applying device maintains the operating state until an i-th deposition layer having an i-th thickness is formed while the absolute value of the calculated temperature change rate is equal to or less than the preset threshold temperature change rate, and wherein the i-th deposition layer is a portion of the deposition layer.

10 . The deposition apparatus of claim 9 , wherein the at least one intermediate time point includes an i 1 -th time point adjacent to the start time point and an i 2 -th time point adjacent to the finish time point,
wherein the controller is configured to control that the voltage applying device in the stop state at the i 1 -th time point and the i 2 -th time point maintains the stop state and then changes to the operating state and control that the voltage applying device maintains the operating state until each of an i 1 -th deposition layer having an i 1 -th thickness and an i 2 -th deposition layer having an i 2 -th thickness is formed while the absolute value of the calculated temperature change rate is equal to or less than the preset threshold temperature change rate, and wherein the i 1 -th deposition layer and the i 2 -th deposition layer are a portion of the i-th deposition layer and the i 1 -th thickness is equal to the i 2 -th thickness or less than the i 2 -th thickness.

11 . The deposition apparatus of claim 10 , wherein the i 1 -th thickness is equal to the s-th thickness or greater than the s-th thickness, and
wherein the i 2 -th thickness is less than the f-th thickness.

12 . The deposition apparatus of claim 1 , wherein the deposition substrate has a flat form.

13 . The deposition apparatus of claim 1 , wherein the deposition substrate has a form with at least a portion bent, and
wherein the controller is co

Assignees

• Samsung Electronics Co Ltd

Inventors

• Han June Hyun
• KIM SungHyup
• Kim Jeongdu
• Park Seung-Yul
• Han Seung-Yong

Classifications

• C23C14/545

  using measurement on deposited material · CPC title

• C23C14/34 Primary

  Sputtering · CPC title

• C23C14/541 Primary

  Heating or cooling of the substrates · CPC title

• C23C14/542 Primary

  Controlling the film thickness or evaporation rate · CPC title