Multi-Material Thermal Barrier Coating System
US-2016362796-A1 · Dec 15, 2016 · US
Controlling the film thickness or evaporation rate
Controlling the film thickness or evaporation rate · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23C14/542 |
| Official title | {Controlling the film thickness or evaporation rate} |
| Display label | Controlling the film thickness or evaporation rate |
| Total patents | 442 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 29 |
| 2016 | 49 |
| 2017 | 41 |
| 2018 | 49 |
| 2019 | 36 |
| 2020 | 37 |
| 2021 | 46 |
| 2022 | 50 |
| 2023 | 27 |
| 2024 | 37 |
| 2025 | 33 |
| 2026 | 8 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Ion assisted deposition top coat of rare-earth oxide
US-2016326626-A1 · Nov 10, 2016 · US
Method of fabricating composite pdms microstructure
US-2016326629-A1 · Nov 10, 2016 · US
Three-Dimensional (3D) Photonic Chip-to-Fiber Interposer
US-2016327749-A1 · Nov 10, 2016 · US
Functionally Graded Material By In-Situ Gradient Alloy Sputter Deposition Management
US-2016326638-A1 · Nov 10, 2016 · US
Substrate processing apparatus for forming film including at least two different elements
US-2016329208-A1 · Nov 10, 2016 · US
Functionally Graded Material By In-Situ Gradient Alloy Sputter Deposition Management
US-2016326631-A1 · Nov 10, 2016 · US
Substrate processing apparatus capable of forming films including at least two different elements
US-9487861-B2 · Nov 8, 2016 · US
Method of manufacturing semiconductor device for forming film including at least two different elements
US-9478417-B2 · Oct 25, 2016 · US
Fabrication of integrated computational elements using cylindrical substrate support shaped to match a cross-section of a spatial profile of a deposition plume
US-2016298230-A1 · Oct 13, 2016 · US
Method of manufacturing semiconductor device for forming film including at least two different elements
US-9443720-B2 · Sep 13, 2016 · US
Multi-material thermal barrier coating system
US-9428837-B2 · Aug 30, 2016 · US
Method of making durable articles
US-9410238-B2 · Aug 9, 2016 · US
Counter based time compensation to reduce process shifting in reactive magnetron sputtering reactor
US-2016222503-A1 · Aug 4, 2016 · US
Method of manufacturing semiconductor device
US-2016211132-A1 · Jul 21, 2016 · US
Steel sheet coated with aluminum-magnesium, and method for manufacturing same
US-2016194737-A1 · Jul 7, 2016 · US
Method of manufacturing semiconductor device by forming a film on a substrate
US-9384971-B2 · Jul 5, 2016 · US
Method of manufacturing a semiconductor device by forming a film on a substrate
US-9384968-B2 · Jul 5, 2016 · US
Method of manufacturing semiconductor device by forming a film on a substrate
US-9384969-B2 · Jul 5, 2016 · US
Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
US-9385013-B2 · Jul 5, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23C14/542?
- CPC C23C14/542 is the Cooperative Patent Classification code for “Controlling the film thickness or evaporation rate.”
- How many patents are filed under CPC C23C14/542 (Controlling the film thickness or evaporation rate)?
- Our database includes 442 publications tagged with this CPC code.
- Is patent activity under CPC C23C14/542 growing?
- Publication counts under this code: 37 in 2024 vs 33 in 2025 (latest complete years).