Methods for synthesizing and/or purifying molybdenum compounds and related compositions and related systems

Patent metadata

Field	Value
Publication number	US-2026035262-A1
Application number	US-202519281532-A
Country	US
Kind code	A1
Filing date	Jul 25, 2025
Priority date	Jul 30, 2024
Publication date	Feb 5, 2026
Grant date	—

Abstract

Methods for synthesizing and/or purifying molybdenum compounds are provided. A method comprises obtaining a reagent; obtaining a metal trioxide compound; and contacting the reagent and the metal trioxide compound sufficient to form a reaction product comprising a molybdenum compound. Related compositions, related systems, and other related methods are provided, among other things.

First claim

What is claimed is:

1 . A method comprising:
obtaining a reagent,
wherein the reagent comprises at least one of:
a first metal halide compound,
a second metal halide compound,
a third metal halide compound, or
any combination thereof;

obtaining a metal trioxide compound of the formula:

where:
M is W or Mo; and

contacting the reagent and the metal trioxide compound sufficient to form a reaction product of the formula:

where:
M is W or Mo; and
X is a halide.

2 . The method of claim 1 , wherein the first metal halide compound comprises a compound of the formula:

where:
M 1a and M 1b are each independently a first metal;
X 1 is a first halide;
a is 0 to 6;
b is 0 to 6; and
c is at least 1.

3 . The method of claim 1 , wherein the first metal halide compound comprises a compound of the formula:

where:
M 1a is an alkali metal, an alkaline earth metal, or a transition metal;
M 1b is Sn or Al;
X 1 is Cl, Br, F, or I;
a is at least 1;
b is at least 1; and
c is at least 1.

4 . The method of claim 3 , wherein M 1a is Li, Na, K, Mg, or Ca.

5 . The method of claim 1 , wherein the first metal halide compound comprises at least one of LiSnCl 3 , NaSnCl 3 , KSnCl 3 , LiAlCl 4 , NaAlCl 4 , KAlCl 4 , or any combination thereof.

6 . The method of claim 1 , wherein the second metal halide compound comprises a compound of the formula:

where:
M 2 is a second metal;
X 2 is a second halide;
d is 1 to 6; and
e is 1 to 6.

7 . The method of claim 1 , wherein the second metal halide compound comprises a compound of the formula:

where:
M 2 is an alkali metal, an alkaline earth metal, or a transition metal;
X 2 is Cl, Br, F, or I;
d is 1 to 6; and
e is 1 to 6.

8 . The method of claim 7 , wherein M 2 is Li, Na, K, Mg, Ca, Sn, Al, Si, B, or Ga.

9 . The method of claim 1 , wherein the second metal halide compound comprises at least one of SnCl 2 , SnCl 4 , AlCl 3 , LiCl, NaCl, KCl, or any combination thereof.

10 . The method of claim 1 , wherein the third metal halide compound comprises a compound of the formula:

where:
M 3 is a third metal;
X 3 is a third halide;
f is 1 to 6; and
g is 1 to 6.

11 . The method of claim 1 , wherein the third metal halide compound comprises a compound of the formula:

where:
M 3 is an alkali metal, an alkaline earth metal, or a transition metal;
X 3 is Cl, Br, F, or I;
f is 1 to 6; and
g is 1 to 6.

12 . The method of claim 11 , wherein M 3 is Li, Na, K, Mg, Ca, Sn, Al, Si, B, or Ga.

13 . The method of claim 1 , wherein the third metal halide compound comprises at least one of SnCl 2 , SnCl 4 , AlCl 3 , LiCl, NaCl, KCl, or any combination thereof.

14 . The method of claim 1 , wherein the reagent comprises the first metal halide compound and the second metal halide compound.

15 . The method of claim 14 , wherein the first metal halide compound and the second metal halide compound form a eutectic mixture.

16 . The method of claim 1 , wherein the reagent comprises the first metal halide compound, the second metal halide compound, and the third metal halide compound.

17 . The method of claim 16 , wherein the first metal halide compound, the second metal halide compound, and the third metal halide compound form a eutectic mixture.

18 . The method of claim 1 , wherein a melting point of the reagent is a temperature of 300° C. or less.

19 . The method of claim 1 , wherein a melting point of the reagent is a temperature of −20° C. to 300° C.

20 . The method of claim 1 , wherein the contacting proceeds at a temperature of 300° C. or less.

21 . The method of claim 1 , wherein the contacting proceeds at a temperature of 20° C. to 300° C.

22 . The method of claim 1 , wherein the contacting proceeds at a pressure of 1 Torr or less.

23 . The method of claim 1 , wherein the contacting proceeds at a pressure of 0.01 Torr to 1 Torr.

24 . The method of claim 1 , wherein the method does not comprise a gas comprising chlorine.

25 . The method of claim 1 , further comprising:
flowing the reaction product from a vessel to a second vessel; and condensing the reaction product in the second vessel.

26 . A composition comprising:
a compound of the formula:

where:
M is W or Mo; and
X is a halide,

wherein the compound has a purity of at least 99.99969% by weight as determined by inductively coupled plasma mass spectrometry (ICP-MS).

27 . The composition of claim 26 , wherein the composition comprises less than 200 ppb of at least one impurity, as determined by ICP-MS.

28 . The composition of claim 27 , wherein the at least one impurity comprises at least one of a metal component, a water, a hydrated compound, a water adduct, or any combination thereof.

29 . A system comprising:
a vessel,
wherein the vessel is configured for delivering a precursor vapor to a vapor deposition apparatus;
wherein the vessel comprises a precursor comprising a compound of the formula:

where:
M is W or Mo; and
X is a halide,

wherein the precursor is contained in the vessel at a temperature and a pressure sufficient for the compound to have a density of 4 g/cm 3 or less;
wherein the compound has a purity of at least 99.99969% by weight as determined by inductively coupled plasma mass spectrometry (ICP-MS).

30 . The system of claim 29 , when the precursor is vaporized to form the precursor vapor and the precursor vapor is supplied to the vapor deposition apparatus to form a film, the film comprises less than 200 ppb of at least one impurity, as determined by ICP-MS.

Assignees

• Entegris Inc

Inventors

• Ermert David M
• Hendrix Bryan C

Classifications

• C01P2006/80

  Compositional purity · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title

• C01G39/04 Primary

  Halides · CPC title

• C01G41/04

  Halides · CPC title