Photosensitive organic insulating material composition, insulating film, gate insulating film, transistor, electronic device, and method for manufacturing transistor

Patent metadata

Field	Value
Publication number	US-2026013312-A1
Application number	US-202519326375-A
Country	US
Kind code	A1
Filing date	Sep 11, 2025
Priority date	Mar 16, 2023
Publication date	Jan 8, 2026
Grant date	—

Abstract

An objective of the present invention is to provide a photosensitive organic insulating composition having sufficient absorption, even of i-line radiation, as a photosensitive organic insulating composition that has little influence on device reliability and that is capable of forming a gate insulating film for transistors. An objective of the present invention is also to provide a gate insulating film and a transistor. A photosensitive organic insulating composition according to one embodiment of the present invention contains a chalcone compound and polyvinyl cinnamate.

First claim

1 . A photosensitive organic insulating material composition comprising:
a chalcone compound; and polyvinyl cinnamate.

2 . The photosensitive organic insulating material composition according to claim 1 , wherein the chalcone compound is at least one selected from the group consisting of chalcone and methoxychalcone.

3 . The photosensitive organic insulating material composition according to claim 1 , wherein a ratio of a total mass of the chalcone compound to a mass of the polyvinyl cinnamate is 0.01 to 1.

4 . The photosensitive organic insulating material composition according to claim 1 , wherein a total amount of the chalcone compound and the polyvinyl cinnamate is 10% by mass to 30% by mass with respect to 100% by mass of the total photosensitive organic insulating material composition.

5 . The photosensitive organic insulating material composition according to claim 1 , wherein a total amount of the chalcone compound is 0.1% by mass to 15% by mass with respect to 100% by mass of the total photosensitive organic insulating material composition.

6 . The photosensitive organic insulating material composition according to claim 1 , having an absorption spectrum peak in a wavelength range of 300 to 370 nm.

7 . An insulating film which is a photocured product of the photosensitive organic insulating material composition according to claim 1 .

8 . A gate insulating film that is a photocured product of the photosensitive organic insulating material composition according to claim 1 .

9 . A transistor having the gate insulating film according to claim 8 .

10 . An electronic device having the transistor according to claim 9 .

11 . A method for manufacturing a gate insulating film, comprising:
a step of applying the photosensitive organic insulating material composition onto a substrate, the photosensitive organic insulating material composition comprising a chalcone compound and polyvinyl cinnamate; and a step of curing the photosensitive organic insulating material composition by exposure to form a gate insulating film.

12 . A method for manufacturing a transistor having a gate insulating film, comprising:
a step of forming the gate insulating film by the method for manufacturing a gate insulating film according to claim 11 .

Assignees

• Nikon Corp

Inventors

• Yamada Kentaro
• Kawakami Yusuke
• Koizumi Shohei

Classifications

• G03F7/033

  the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K10/471 Primary

  the gate dielectric comprising only organic materials · CPC title

• H10K59/125

  including organic TFTs [OTFT] · CPC title