Silicon wafer, cell, cell string, and solar module

Patent metadata

Field	Value
Publication number	US-2025393337-A1
Application number	US-202519307898-A
Country	US
Kind code	A1
Filing date	Aug 22, 2025
Priority date	Feb 23, 2023
Publication date	Dec 25, 2025
Grant date	—

Abstract

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm −3 to 2E+16 cm −3 , and a minority carrier lifetime of the silicon wafer is greater than or equal to 200 μs.

First claim

1 . A silicon wafer, wherein a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm −3 to 2E+16 cm −3 , and
wherein a minority carrier lifetime in the silicon wafer is greater than or equal to 200 μs.

2 . The silicon wafer of claim 1 , wherein the silicon wafer is obtained by performing gettering treatment on a silicon substrate containing an antimony element,
wherein a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm −3 to 2E+16 cm −3 , and wherein a minority carrier lifetime in the silicon wafer is greater than or equal to 300 μs.

3 . The silicon wafer of claim 1 , wherein a resistivity of the silicon wafer ranges from 0.3 to 10 Ω·cm.

4 . The silicon wafer of claim 1 , wherein the silicon wafer comprises at least one of phosphorus, gallium, and germanium.

5 . The silicon wafer of claim 1 , wherein a mechanical strength of the silicon wafer is greater than or equal to 70 MPa.

6 . The silicon wafer of claim 1 , wherein the silicon wafer satisfies:

n
0

+
a

τ
SRH

×
b
×

(

n
0

+
c

)

≤

5
⁢
E

-
1

where n 0 is the concentration of the antimony element in the silicon wafer in a unit of cm −3 , τ SRH is the minority carrier lifetime in the silicon wafer in a unit of second, and a, b, and c are fitting parameters and have units of cm −3 , cm/s, and cm −3 respectively,
wherein a is value selected from 3.5E+18 to 5.5E+18, b is a value selected from 0.8E+7 to 1.5E+7, and c is value selected from 1E+15 to 9E+15.

7 . The silicon wafer of claim 2 , wherein the silicon wafer satisfies:

n
0

+
a

τ
SRH

×
b
×

(

n
0

+
c

)

≤

1
⁢
E

-
1

where n 0 is the concentration of the antimony element in the silicon wafer in a unit of cm −3 , τ SRH is the minority carrier lifetime of the silicon wafer in a unit of second, and a, b, and c are fitting parameters and have units of cm −3 , cm/s, and cm −3 respectively,
wherein a is value selected from 3.5E+18 to 5.5E+18, b is a value selected from 0.8E+7 to 1.5E+7, and c is value selected from 1E+15 to 9E+15.

8 . A solar cell, comprising a silicon substrate, wherein the silicon substrate comprises an antimony element, wherein a concentration of the antimony element in the silicon substrate ranges from 4E+14 cm −3 to 2E+16 cm −3 , and wherein a minority carrier lifetime in the silicon substrate is greater than or equal to 200 μs, and
wherein the solar cell further comprises:
a doped region in the silicon substrate under at least one surface of the silicon substrate, wherein the doped region comprises a doping element selected from Group IIIA elements or Group VA elements; or
a doped passivation layer on at least one surface of the silicon substrate.

9 . The solar cell of claim 8 , wherein the solar cell comprises the doped region,
wherein in the doped region, a sum of the concentration of the antimony element and a doping concentration of the doping element is less than or equal to 1E+21 cm −3 .

10 . The solar cell of claim 8 , wherein:
when the doping element is selected from Group IIIA elements, a thickness of the doped region ranges from 30 to 650 nm; or when the doping element is selected from Group VA elements, a thickness of the doped region ranges from 100 to 200 nm.

11 . The solar cell of claim 8 , comprising:
a light absorbing body, wherein the light absorbing body comprises the silicon substrate and a region for separating carriers generated by the silicon substrate; and an electrode on the light absorbing body, wherein the electrode comprises a metallic crystal part in contact with the light absorbing body, wherein the metallic crystal part comprises the antimony element.

12 . The solar cell of claim 11 , wherein the metallic crystal part further comprises a doping element, and a doping concentration of the doping element is greater than a doping concentration of the antimony element.

13 . The solar cell of claim 8 , wherein the doped region comprises a first doped region and a second doped region,
wherein the solar cell comprises an interfacial passivation layer and a doped passivation layer that are sequentially stacked on a surface of the first doped region away from the silicon substrate, wherein the doped passivation layer is doped with a first doping element, wherein the second doped region is doped with a second doping element, and wherein a conduction type of the first doped region is opposite to a conduction type of the second doped region.

14 . The solar cell of claim 13 , wherein the first doping element comprises a Group VA element, wherein the second doping element comprises a Group IIIA element,
wherein a doping concentration of the first doping element in the doped passivation layer is C1, wherein C1 is measured at a first preset depth from the surface of the doped passivation layer away from the silicon substrate, wherein a doping concentration of the second doping element in the doped passivation layer is C2, wherein C2 is measured at the first preset depth from the surface of the second doped region, wherein C1 is greater than C2, wherein a thickness of the doped passivation layer ranges from 100 to 400 nm, and wherein the first preset depth is less than or equal to the thickness of the doped passivation layer.

15 . The solar cell of claim 13 , wherein the first doping element comprises a Group VA element, wherein the second doping element comprises a Group IIIA element,
wherein the interfacial passivation layer and the doped passivation layer are sequentially stacked on the surface of the first doped region and on a surface of the second doped region away from the silicon substrate, wherein a doping concentration of the first doping element in the doped passivation layer is C3, wherein C3 is measured at a first preset depth from the surface of the

Assignees

• Longi Green Energy Technology Co Ltd

Inventors

• Fu Nannan
• Wang Yichun
• Bai Xueqi
• Jin Qian
• Lu Ruochen
• Fu Zehua
• Chen Xiaobo
• Fan Jiarui
• Ma Xiaokang
• Xu Senyang

Classifications

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/04

  adding doping materials, e.g. for n-p-junction · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F77/311

  for photovoltaic cells · CPC title

• H10F19/906

  characterised by the materials of the structures · CPC title