Silicon wafer, cell, cell string, and solar module

Patent metadata

Field	Value
Publication number	US-2025393336-A1
Application number	US-202519307432-A
Country	US
Kind code	A1
Filing date	Aug 22, 2025
Priority date	Feb 23, 2023
Publication date	Dec 25, 2025
Grant date	—

Abstract

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm−3 to 2E+16 cm−3, and an oxygen content in the silicon wafer is less than 25 ppma.

First claim

1 . A silicon wafer, wherein a concentration of an antimony element in the silicon wafer ranges from 4.00E+14 cm −3 to 2.00E+16 cm −3 , and wherein an oxygen content in the silicon wafer is less than 25 ppma.

2 . The silicon wafer of claim 1 , wherein the silicon wafer is a monocrystalline silicon wafer applied in a photovoltaic structure.

3 . The silicon wafer of claim 1 , wherein the oxygen content in the silicon wafer is greater than 2 ppma.

4 . The silicon wafer of claim 1 , wherein an interstitial oxygen content in the silicon wafer is greater than 1 ppma.

5 . The silicon wafer of claim 1 , wherein a resistivity of the silicon wafer ranges from 0.3 to 10 Ω·cm.

6 . The silicon wafer of claim 1 , wherein the silicon wafer further comprises at least one of phosphorus, gallium, and germanium.

7 . The silicon wafer of claim 1 , wherein a mechanical strength of the silicon wafer is greater than or equal to 70 MPa.

8 . A solar cell, wherein a silicon substrate of the solar cell comprises an antimony element, wherein a concentration of the antimony element in the silicon substrate ranges from 4E+14 cm −3 to 2E+16 cm −3 , and wherein an oxygen content in the silicon substrate is less than 35 ppma.

9 . The solar cell of claim 8 , further comprising:
a doped region in the silicon substrate under at least one surface of the silicon substrate, wherein the doped region comprises a doping element selected from Group IIIA elements or Group VA elements; or a doped passivation layer on at least one surface of the silicon substrate.

10 . The solar cell of claim 9 , wherein a sum of the concentration of the antimony element in the doped region and a doping concentration of the doping element in the doped region is less than or equal to 1E+21 cm −3 .

11 . The solar cell of claim 9 , wherein:
when the doping element comprises a Group IIIA element, a thickness range of the doped region is from 30 to 650 nm or from 80 to 180 nm; or when the doping element comprises a Group VA element, a thickness range of the doped region is from 100 to 200 nm or from 30 to 100 nm.

12 . The solar cell of claim 9 , wherein the doped region comprises a first doped region and a second doped region,
wherein the solar cell comprises an interfacial passivation layer and a doped passivation layer that are sequentially stacked on a surface of the first doped region away from the silicon substrate, wherein the doped passivation layer is doped with a first doping element, wherein the second doped region is doped with a second doping element, and wherein a conduction type of the first doped region is opposite to a conduction type of the second doped region.

13 . The solar cell of claim 12 , wherein the first doped elements comprise a Group VA element, and the second doped element comprises a Group IIIA element,
wherein:
a doping concentration of the first doping element in the doped passivation layer is C1, wherein C1 is measured at a first preset depth from the surface of the doped passivation layer away from the silicon substrate,
a doping concentration of the second doping element in the doped passivation layer is C2, wherein C2 is measured at the first preset depth from the surface of the second doped region,
C1 is greater than C2,
a thickness of the doped passivation layer ranges from 100 to 400 nm, and
the first preset depth is less than or equal to the thickness of the doped passivation layer; or
wherein:
the interfacial passivation layer and the doped passivation layer are sequentially stacked on the surface of the first doped region and on a surface of the second doped region away from the silicon substrate,
a doping concentration of the first doping element in the doped passivation layer is C3, wherein C3 is measured at a first preset depth from the surface of the doped passivation layer on the first doped region, the surface facing away from the silicon substrate,
a doping concentration of the second doping element in the doped passivation layer is C4, wherein C3 is measured at the first preset depth from the surface of the doped passivation layer in the second doped region, the surface facing away from the silicon substrate,
C3 is greater than C4,
a thickness of the doped passivation layer on the first doped region ranges from 100 to 400 nm,
a thickness of the doped passivation layer on the second doped region ranges from 100 to 400 nm, and
the first preset depth is less than or equal to the thickness of the doped passivation layer on the first doped region.

14 . The solar cell of claim 13 ,
wherein:
a doping concentration of the first doping element in the silicon substrate is C5, wherein C5 is measured at a third preset depth from the surface of the doped passivation layer away from the silicon substrate,
a doping concentration of the second doping element in the silicon substrate is C6, wherein C6 is measured at the third preset depth from the surface of the second doped region, C5 is greater than C6,
a thickness of the first doped region ranges from 30 to 100 nm, and
the third preset depth is less than or equal to a sum of thicknesses of the doped passivation layer, the interfacial passivation layer, and the first doped region; or
wherein:
a doping concentration of the first doping element in a silicon matrix is C7, wherein C7 is measured at the third preset depth from the surface of the doped passivation layer on the first doped region, the surface facing away from the silicon matrix,
a doping concentration of the second doping element in the silicon matrix is C8, C8 is measured at the third preset depth from the surface of the doped passivation layer on the second doped region, the surface facing away from the silicon matrix,
C7 is greater than C8,
a thickness of the first doped region ranges from 30 to 100 nm,
the third preset depth is less than or equal to a sum of thicknesses of the doped passivation layer and the interfacial passivation layer on the first doped region, and the first doped region, and
the depth is measured along a direction from the doped passivation layer to a surface of the first doped region.

15 . The solar cell of claim 8 , wherein the solar cell comprises an electrode formed on a light absorbing body, the electrode comprises a metallic crystal part in contact with the light absorbing body, and the metallic crystal part comprises the antimony element, wherein the light absorbing body comprises the silicon substrate and a region for separating carriers generated by the silicon substrate.

16 . The solar cell of claim 15 , wherein the metallic crystal part further comprises a doping element, and a doping concentration of the doping element is greater than a doping concentration of the antimony element.

17 . The solar cell of claim 8 , wherein the solar cell comprises:
a light absorbing body, wherein the light absorbing body comprises a silicon matrix, and wherein a resistivity of the silicon matrix ranges from 0.3 to 10 Ω·cm.

18 . The solar cell of claim 8 , wherein a mechanical strength of the solar cell is greater than or equal to 50 MPa.

19 . A solar module, comprising a plurality of solar cells, an encapsulation layer, a cover, and a back sheet, wherein the plurality of solar cells are sealed in the encapsulation layer, and the encapsulation layer is located between the cover and the back sheet, and wherein a solar cell of the plurality of solar cells comprises:
a silicon substrate of the solar cell comprises an antimony element, wherein a concentration of the antimony e

Assignees

• Longi Green Energy Technology Co Ltd

Inventors

• Fu Nannan
• Wang Yichun
• Bai Xueqi
• Fu Zehua
• Lu Ruochen
• Chen Xiaobo
• Ma Xiaokang
• Fan Jiarui
• Xu Senyang
• Jin Qian

Classifications

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/04

  adding doping materials, e.g. for n-p-junction · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F77/311

  for photovoltaic cells · CPC title

• H10F19/906

  characterised by the materials of the structures · CPC title