Monocrystalline silicon ingot and silicon wafer prepared therefrom, cell, cell string, and solar module

Patent metadata

Field	Value
Publication number	US-2025389046-A1
Application number	US-202519307973-A
Country	US
Kind code	A1
Filing date	Aug 22, 2025
Priority date	Feb 23, 2023
Publication date	Dec 25, 2025
Grant date	—

Abstract

The present disclosure relates to a monocrystalline silicon ingot, a silicon wafer, a solar cell, a solar cell string, and a solar module. In an example monocrystalline silicon ingot, a concentration of an antimony element is 0.04E+16 atom/cm 3 to 2E+16 atom/cm 3 in the monocrystalline silicon ingot.

First claim

1 . A monocrystalline silicon ingot, wherein the monocrystalline silicon ingot comprises an antimony element, and wherein a concentration of the antimony element is 4E+14 atom/cm 3 to 2E+16 atom/cm 3 .

2 . The monocrystalline silicon ingot of claim 1 , wherein the monocrystalline silicon ingot satisfies the following condition: (C1−C2)/C1≤10%, where C1 is a concentration of the antimony element on a tail end face of the monocrystalline silicon ingot, and C2 is a concentration of the antimony element on a head end face of the monocrystalline silicon ingot.

3 . The monocrystalline silicon ingot of claim 1 , wherein a resistivity of the monocrystalline silicon ingot ranges from 0.2 to 10 Ω·cm.

4 . A silicon wafer, wherein the silicon wafer comprises an antimony element, and wherein a concentration of the antimony element ranges from 0.04E+16 atom/cm 3 to 2.00E+16 atom/cm 3 .

5 . The silicon wafer of claim 4 , wherein the silicon wafer satisfies the following condition: −15%≤(C3−C4)/C3≤15%, where C3 is a center concentration of the antimony element in a radial cross section, and C4 is an edge concentration of the antimony element in the radial cross section.

6 . The silicon wafer of claim 4 , wherein the silicon wafer further comprises at least one of phosphorus, gallium, and germanium.

7 . The silicon wafer of claim 4 , wherein a mechanical strength of the silicon wafer is greater than or equal to 70 MPa.

8 . A solar cell, comprising a silicon substrate, wherein the silicon substrate comprises an antimony element, wherein a concentration of an antimony element in the silicon substrate is 4E+14 atom/cm 3 to 2E+16 atom/cm 3 , and
wherein the solar cell further comprises:
a doped region in the silicon substrate under at least one surface of the silicon substrate, wherein the doped region comprises a doping element; or
a doped passivation layer on at least one surface of the silicon substrate.

9 . The solar cell of claim 8 , wherein a sum of the concentration of the antimony element in the doped region and a concentration of the doping element in the doped region is less than or equal to 1E+21 atom/cm 3 .

10 . The solar cell of claim 8 , wherein:
when the doping element comprises a Group IIIA element, a thickness of the doped region ranges from 30 to 650 nm; or when the doping element comprises a Group VA element, a thickness of the doped region ranges from 100 to 200 nm.

11 . The solar cell of claim 8 , wherein the doped region comprises a first doped region and a second doped region,
wherein the solar cell comprises an interfacial passivation layer and a doped passivation layer that are sequentially stacked on a surface of the first doped region away from the silicon substrate, wherein the doped passivation layer is doped with a first doping element, wherein the second doped region is doped with a second doping element, and wherein a conduction type of the first doped region is opposite to a conduction type of the second doped region.

12 . The solar cell of claim 11 , wherein the first doping element comprises a Group VA element, wherein the second doping element comprises a Group IIIA element,
wherein a doping concentration of the first doping element in the doped passivation layer is C5, wherein C5 is measured at a first preset depth from the surface of the doped passivation layer away from the silicon substrate, wherein a doping concentration of the second doping element in the doped passivation layer is C6, wherein C6 is measured at the first preset depth from the surface of the second doped region, wherein C5 is greater than C6, wherein a thickness of the doped passivation layer ranges from 100 to 400 nm, and wherein the first preset depth is less than or equal to the thickness of the doped passivation layer.

13 . The solar cell of claim 11 , wherein the first doping element comprises a Group VA element, wherein the second doping element comprises a Group IIIA element,
wherein the interfacial passivation layer and the doped passivation layer are sequentially stacked on the surface of the first doped region away from the silicon substrate and on a surface of the second doped region away from the silicon substrate, wherein a doping concentration of the first doping element in the doped passivation layer is C7, wherein C7 is measured at a first preset depth from the surface of the doped passivation layer on the first doped region, the surface facing away from the silicon substrate, wherein a doping concentration of the second doping element in the doped passivation layer is C8, wherein C8 is measured at the first preset depth from the surface of the doped passivation layer on the second doped region, the surface facing away from the silicon substrate, wherein C7 is greater than C8, wherein a thickness of the doped passivation layer on the first doped region ranges from 100 to 400 nm, wherein a thickness of the doped passivation layer on the second doped region ranges from 100 to 400 nm, and wherein the first preset depth is less than or equal to the thickness of the doped passivation layer on the first doped region.

14 . The solar cell of claim 11 , wherein a doping concentration of the first doping element in the silicon substrate is C9, wherein C9 is measured at a third preset depth from the surface of the doped passivation layer away from the silicon substrate,
wherein a doping concentration of the second doping element in the silicon substrate is C10, wherein C10 is measured at the third preset depth from the surface of the second doped region, wherein C9 is greater than C10, wherein a thickness of the first doped region ranges from 30 to 100 nm, wherein the third preset depth is less than or equal to a sum of thicknesses of the doped passivation layer, the interfacial passivation layer, and the first doped region, and wherein the depth is measured along a direction from the doped passivation layer to a surface of the first doped region.

15 . The solar cell of claim 8 , wherein:
when the doping element comprises a Group IIIA element, a thickness of the doped region ranges from 80 to 180 nm; or when the doping element comprises a Group VA element, a thickness of the doped region ranges from 30 to 100 nm.

16 . The solar cell of claim 8 , wherein the solar cell comprises:
a light absorbing body comprising the silicon substrate and a region for separating carriers generated by the silicon substrate; and an electrode on the light absorbing body, wherein the electrode comprises a metallic crystal part in contact with the light absorbing body, and wherein the metallic crystal part comprises the antimony element.

17 . The solar cell of claim 16 , wherein the metallic crystal part further comprises a doping element, wherein a concentration of the doping element is greater than a concentration of the antimony element.

18 . The solar cell of claim 8 , wherein a resistivity of the silicon substrate is 0.3 to 10 Ω·cm.

19 . A solar module, comprising a plurality of solar cells, an encapsulation layer, a cover, and a back sheet, wherein the plurality of solar cells are sealed in the encapsulation layer, and wherein the encapsulation layer is located between the cover and the back sheet,
wherein a solar cell of the plurality of solar cells comprises a silicon substrate, wherein the silicon substrate comprises an antimony element, wherein a concentration of an antimony element in the silicon substrate is 4E+14 atom/cm 3 to 2E+16 atom/cm 3 , and wherein the solar cell further comprises:
a dop

Assignees

• Longi Green Energy Technology Co Ltd

Inventors

• Fu Nannan
• Chen Xiaobo
• Wang Yichun
• Han Wei
• Deng Hao

Classifications

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/04 Primary

  adding doping materials, e.g. for n-p-junction · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F77/311

  for photovoltaic cells · CPC title

• H10F19/906

  characterised by the materials of the structures · CPC title