Multifunctional wafer pretreatment chamber and chemical vapor deposition device
US-2024337011-A1 · Oct 10, 2024 · US
Heater materials to prevent arcing
US2025389022A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025389022-A1 |
| Application number | US-202418751693-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 24, 2024 |
| Priority date | Jun 24, 2024 |
| Publication date | Dec 25, 2025 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
Embodiments disclosed herein generally relate to a substrate support and a method for fabricating the same. The substrate support includes a heater having a high resistivity, such as a resistivity between 1E8 ohm-centimeter (ohm-cm) and 1E11. The resistivity of the heater is configured to prevent arcing.
First claim
Opening claim text (preview).
What is claimed is: 1 . A substrate support disposed within a processing volume, comprising: a heater having a resistivity between 1E8 ohm-centimeter (ohm-cm) and 1E11 ohm-cm, wherein the resistivity of the heater is configured to prevent arcing. 2 . The substrate support of claim 1 , wherein the heater is formed from an aluminum (Al) containing material. 3 . The substrate support of claim 2 , wherein the aluminum containing material comprises aluminum nitride (AlN). 4 . The substrate support of claim 2 , wherein the aluminum containing material is one or more of AlN, aluminum oxide (AlO), aluminum oxynitride (AlON), aluminum silicon nitride (AlSiN), aluminum silicate (Al 2 SiO 5 ), or aluminum gallium (AlG). 5 . The substrate support of claim 1 , wherein the heater is doped with magnesium (Mg). 6 . The substrate support of claim 5 , wherein a concentration of the magnesium makes up no more than 10% of a weight of the heater. 7 . The substrate support of claim 1 , wherein the resistivity of the heater is tailored to exhibit a desired arcing margin. 8 . The substrate support of claim 1 , wherein the heater is configured to reduce leakage current. 9 . A method of fabricating a substrate support, comprising: forming a heater having a resistivity between 1E8 ohm-centimeter (ohm-cm) and 1E11 ohm-cm, wherein the resistivity of the heater is configured to prevent arcing. 10 . The method of fabricating the substrate support of claim 9 , wherein the heater is formed from an aluminum (Al) containing material. 11 . The method of fabricating the substrate support of claim 10 , wherein the aluminum containing material comprises aluminum nitride (AlN). 12 . The method of fabricating the substrate support of claim 10 , wherein the aluminum containing material is one or more of AlN, aluminum oxide (AlO), aluminum oxynitride (AlON), aluminum silicon nitride (AlSiN), aluminum silicate (Al 2 SiO 5 ), or aluminum gallium (AlG). 13 . The method of fabricating the substrate support of claim 9 , wherein the heater is doped with magnesium (Mg). 14 . The method of fabricating the substrate support of claim 13 , wherein a concentration of the magnesium makes up no more than 10% of a weight of the heater. 15 . The method of fabricating the substrate support of claim 9 , wherein the resistivity of the heater is tailored to exhibit a desired arcing margin. 16 . The method of fabricating the substrate support of claim 9 , wherein the heater is configured to reduce leakage current.
Assignees
Inventors
Classifications
Thermal treatments, e.g. annealing or sintering · CPC title
- C23C16/4586Primary
Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title
- H05B3/12Primary
characterised by the composition or nature of the conductive material · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2025389022A1 cover?
- Embodiments disclosed herein generally relate to a substrate support and a method for fabricating the same. The substrate support includes a heater having a high resistivity, such as a resistivity between 1E8 ohm-centimeter (ohm-cm) and 1E11. The resistivity of the heater is configured to prevent arcing.
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification C23C16/4586. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Dec 25 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).