Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-2025367701-A1
Application number	US-202519298529-A
Country	US
Kind code	A1
Filing date	Aug 13, 2025
Priority date	Mar 15, 2021
Publication date	Dec 4, 2025
Grant date	—

Abstract

A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.

First claim

1 .- 13 . (canceled)

14 . A substrate processing apparatus comprising:
a processing container configured to accommodate a substrate therein and to define a hermetically-sealed processing space; a heater configured to heat the substrate inside the processing container; a supplier configured to supply a material that forms a friction reducing film toward a rear surface of the substrate inside the processing container; a first gas supplier configured to supply a gas to a peripheral edge of a frontal surface of the substrate; and a second gas supplier configured to supply a gas closer to a center of the frontal surface of the substrate than the first gas supplier.

15 . The substrate processing apparatus of claim 14 , wherein the first gas supplier has a plurality of first discharge holes, and
wherein the plurality of first discharge holes are provided in an inner ceiling portion of the processing container along a circumferential direction of the substrate.

16 . The substrate processing apparatus of claim 15 , wherein a distance between each of the plurality of first discharge holes of the first gas supplier is equal to or less than 3 mm, and a supply flow rate from the second gas supplier is less than a supply flow rate from the first gas supplier.

17 . The substrate processing apparatus of claim 16 , wherein the second gas supplier has one second discharge hole or two or more second discharge holes formed in the inner ceiling portion of the processing container and directed toward a central portion of the substrate.

18 . The substrate processing apparatus of claim 17 , wherein the supply flow rate from the first gas supplier and the supply flow rate from the second gas supplier are individually controlled.

19 . The substrate processing apparatus of claim 18 , wherein no other gas supplier is provided between the first gas supplier and the second gas supplier.

20 . The substrate processing apparatus of claim 19 , wherein the gas supplied from the first gas supplier is discharged to the peripheral edge of the substrate obliquely outward from the center of the substrate.

21 . The substrate processing apparatus of claim 14 , wherein the first gas supplier has one slit hole or two or more slit holes, and
wherein the one slit hole or the two or more slit holes are provided in an inner ceiling portion of the processing container along a circumferential direction of the substrate.

22 . The substrate processing apparatus of claim 15 , wherein a distance between each of the plurality of first discharge holes of the first gas supplier is greater than 3 mm, and a supply flow rate from the second gas supplier is greater than a supply flow rate from the first gas supplier.

23 . The substrate processing apparatus of claim 21 , wherein a supply flow rate from the second gas supplier is less than a supply flow rate from the first gas supplier.

24 . The substrate processing apparatus of claim 14 , wherein the second gas supplier has one second discharge hole or two or more second discharge holes formed in an inner ceiling portion of the processing container and directed toward a central portion of the substrate.

25 . The substrate processing apparatus of claim 14 , wherein the supply flow rate from the first gas supplier and the supply flow rate from the second gas supplier are individually controlled.

26 . The substrate processing apparatus of claim 14 , wherein no other gas supplier is provided between the first gas supplier and the second gas supplier.

27 . The substrate processing apparatus of claim 14 , wherein a third gas supplier is provided between the first gas supplier and the second gas supplier to supply the gas to the substrate.

28 . The substrate processing apparatus of claim 27 , wherein a supply flow rate from the third gas supplier is less than the supply flow rates from the first gas supplier and the second gas supplier.

29 . The substrate processing apparatus of claim 14 , wherein the gas supplied from the first gas supplier is discharged to the peripheral edge of the substrate obliquely outward from the center of the substrate.

30 . The substrate processing apparatus of claim 14 , further comprising an exhaust port through which an atmosphere in the processing space is exhausted, the exhaust port being provided in a peripheral wall portion that is a part of the processing container.

31 . A substrate processing method comprising:
supplying a material that forms a friction reducing film toward a rear surface of a substrate while heating the substrate inside the processing container, and exhausting an inside of the processing container from a periphery of the substrate; and supplying a gas toward both a peripheral edge and a central portion of the substrate from a space above the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Kodama Teruhiko
• Matsunaga Koichi
• Iwasaka Hideaki

Classifications

• B05D3/0466

  the gas being a non-reacting gas (B05D3/0406 takes precedence) · CPC title

• B05D3/02

  by baking {(B05D3/04 takes precedence)} · CPC title

• B05C15/00

  Enclosures for apparatus; Booths (spray booths B05B16/00) · CPC title

• B05D3/04

  by exposure to gases · CPC title

• B05C5/02

  {the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g.} from an outlet device in contact or almost in contact, with the work · CPC title