Reflector configurations for energy focusing in processing chambers, and related chamber kits and methods

Patent metadata

Field	Value
Publication number	US-2025358906-A1
Application number	US-202418668482-A
Country	US
Kind code	A1
Filing date	May 20, 2024
Priority date	May 20, 2024
Publication date	Nov 20, 2025
Grant date	—

Abstract

Embodiments of the present disclosure relate to reflector configurations for processing chambers, and related chamber kits and methods. In one or more embodiments, a processing chamber applicable for semiconductor manufacturing includes a substrate support disposed in a processing volume, and a reflector oriented to reflect energy toward the processing volume. The reflector includes one or more recessed surfaces, and a curved outer surface. The curved outer surface includes a first section extending radially outwardly relative to the one or more recessed surfaces, and a second section extending radially outwardly relative to the first section. The first section has a first radius of curvature, and the second section has a second radius of curvature. The curved outer surface includes a third section extending radially outwardly relative to the second section. The third section has a third radius of curvature larger than the second radius of curvature.

First claim

1 . A reflector for disposition as part of a processing chamber, the reflector comprising:
a reflector face comprising:
an inner surface disposed at a first height,
one or more recessed surfaces disposed outwardly of the inner surface, and
a curved outer surface disposed outwardly of the one or more recessed surfaces, the curved outer surface extending to a second height that is larger than the first height.

2 . The reflector of claim 1 , wherein the curved outer surface comprises:
a first section extending radially outwardly relative to the one or more recessed surfaces, the first section having a first radius of curvature; a second section extending radially outwardly relative to the first section, the second section having a second radius of curvature; and a third section extending radially outwardly relative to the second section, the third section having a third radius of curvature.

3 . The reflector of claim 2 , wherein the first radius of curvature and the third radius of curvature are larger than the second radius of curvature.

4 . The reflector of claim 3 , wherein the third radius of curvature is more than double the second radius of curvature.

5 . The reflector of claim 1 , wherein at least part of a profile of the curved outer surface is part of an ellipse.

6 . The reflector of claim 5 , wherein the profile of the curved outer surface defines an azimuthal angle, and the azimuthal angle is greater than 60 degrees.

7 . The reflector of claim 1 , wherein the curved outer surface is formed of gold.

8 . The reflector of claim 1 , wherein the curved outer surface has a surface area that is at least 40% larger than a surface area of at least one of the one or more recessed surfaces.

9 . The reflector of claim 1 , wherein the curved outer surface comprises:
a set of first openings having a first diameter; a set of second openings having a second diameter smaller than the first diameter; and a set of slots having a length larger than the first diameter and the second diameter.

10 . A chamber kit for disposition as part of a processing chamber, the chamber kit comprising:
a reflector comprising:
one or more recessed surfaces, and
a curved outer surface disposed outwardly of the one or more recessed surfaces, and
an outer ledge disposed outwardly of the curved outer surface; and
a shield sized and shaped to abut the outer ledge of the reflector, the shield comprising an inner surface oriented to intersect an outer end of the curved outer surface.

11 . The chamber kit of claim 10 , wherein the reflector further comprises an inner shoulder raised relative to the one or more recessed surfaces, and the curved outer surface and the outer ledge are part of an outer shoulder raised relative to the one or more recessed surfaces.

12 . The chamber kit of claim 11 , wherein the inner shoulder has a first height, and the outer shoulder has a second height that is larger than the first height, and the reflector further comprises a central opening formed in the inner shoulder.

13 . The chamber kit of claim 10 , wherein the shield has a truncated cone shape comprising:
a first end sized and shaped to abut against the reflector, the first end having a first diameter; and a second end away from the reflector, the second end having a second diameter that is less than the first diameter.

14 . The chamber kit of claim 10 , wherein the curved outer surface comprises:
a first section extending radially outwardly relative to the one or more recessed surfaces, the first section having a first radius of curvature; a second section extending radially outwardly relative to the first section, the second section having a second radius of curvature; and a third section extending radially outwardly relative to the second section, the third section having a third radius of curvature.

15 . The chamber kit of claim 14 , wherein the third radius of curvature is more than double the second radius of curvature.

16 . A processing chamber applicable for semiconductor manufacturing, comprising:
a substrate support disposed in a processing volume; one or more heat sources operable to heat the processing volume; and a reflector oriented to reflect energy toward the processing volume, the reflector comprising:
one or more recessed surfaces, and
a curved outer surface disposed outwardly of the one or more recessed surfaces, the curved outer surface comprising:
a first section extending radially outwardly relative to the one or more recessed surfaces, the first section having a first radius of curvature,
a second section extending radially outwardly relative to the first section, the second section having a second radius of curvature, and
a third section extending radially outwardly relative to the second section, the third section having a third radius of curvature larger than the second radius of curvature.

17 . The processing chamber of claim 16 , wherein the curved outer surface of the reflector further comprises:
a fourth section extending radially outwardly relative to the third section, the fourth section having a fourth radius of curvature larger than the third radius of curvature.

18 . The processing chamber of claim 16 , wherein the reflector further comprises:
an outer ledge disposed outwardly of the curved outer surface.

19 . The processing chamber of claim 18 , further comprising:
a shield abutting the outer ledge of the reflector, the shield intersecting an outer end of the curved outer surface.

20 . The processing chamber of claim 18 , wherein the reflector further comprises an inner shoulder raised relative to the one or more recessed surfaces, and the curved outer surface and the outer ledge are part of an outer shoulder raised relative to the one or more recessed surfaces, wherein the inner shoulder has a first height, and the outer shoulder has a second height that is larger than the first height.

Assignees

• Applied Materials Inc

Inventors

• Patil Aniketnitin
• Zhu Zuoming

Classifications

• H05B3/0047 Primary

  for semiconductor manufacture · CPC title

• H05B2203/032

  Heaters specially adapted for heating by radiation heating · CPC title

• H05B3/02 Primary

  Details · CPC title