Molybdenum deposition

Patent metadata

Field	Value
Publication number	US-2025323046-A1
Application number	US-202519217348-A
Country	US
Kind code	A1
Filing date	May 23, 2025
Priority date	Sep 3, 2019
Publication date	Oct 16, 2025
Grant date	—

Abstract

Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.

First claim

1 - 19 . (canceled)

20 . A method comprising:
providing a substrate comprising a feature having a feature bottom and feature sidewalls, wherein the feature bottom comprises a metal or metal nitride surface and the feature sidewalls comprise oxide surfaces; and performing multiple cycles of an atomic layer deposition (ALD) process to selectively deposit a molybdenum (Mo) film on the metal or metal nitride surface relative to the oxide surfaces, wherein the ALD process comprises exposing the feature to alternate pulses of molybdenum-containing precursor and a reducing agent at a first temperature.

21 . The method of claim 20 , further comprising, prior to performing the multiple cycles of the ALD deposition process, exposing the metal-containing surface to a hydrogen-containing plasma.

22 . The method of claim 20 , wherein the reducing agent is thermal hydrogen (H 2 ).

23 . The method of claim 20 , wherein the reducing agent is provided in a plasma generated from hydrogen (H 2 ).

24 . The method of claim 20 , wherein the partial pressure of the reducing agent is at least 10 Torr.

25 . The method of claim 20 , wherein the molybdenum-containing precursor is a chlorine-containing.

26 . The method of claim 20 , wherein the first temperature is no more than 600° C.

27 . The method of claim 20 , wherein the first temperature is no more than 450° C.

28 . The method of claim 20 , wherein the first temperature is no more than 400° C.

29 . The method of claim 20 , wherein the first temperature is at least 350° C.

30 . The method of claim 20 , wherein the molybdenum-containing precursor is a fluorine-containing.

31 . The method of claim 20 , further comprising filling the feature at a higher temperature than the first temperature.

32 . The method of claim 31 , wherein filling the feature comprises growing molybdenum on the oxide surfaces.

33 . The method of claim 32 , wherein the molybdenum is grown non-selectively on the oxide and metal or metal nitride surfaces.

34 . The method of claim 20 , further comprising, partially filling the feature while the substrate is at the first temperature and completely filling the feature while the substrate is at a second temperature, the second temperature being greater than the first temperature.

35 . The method of claim 35 , wherein the partial filling takes place in a first station of a process chamber and the complete filling takes place at a second station of the process chamber.

36 . The method of claim 20 , wherein the metal or metal nitride surface is one of:
cobalt, ruthenium, copper, tungsten, molybdenum, titanium, tin, tantalum, nickel, iridium, and rhodium.

37 . The method of claim 20 , wherein the metal or metal nitride surface is one of:
titanium nitride, molybdenum nitride, tungsten nitride, tungsten carbon nitride, titanium silicide, and tantalum nitride.

38 . The method of claim 20 , wherein the metal or metal nitride surface is an elemental metal surface.

39 . The method of claim 20 , wherein the sidewalls comprise an oxide is selected form:
polyethyleneoxide, tetraethyl orthosilicate, flowable oxide, and a carbon doped oxide.

Assignees

• Lam Res Corp

Inventors

• Na Jeong-Seok
• Hsieh Yao-Tsung
• Lai Chiukin Steven
• Van Cleemput Patrick A

Classifications

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/082

  the openings being tapered via holes · CPC title

• H10P14/418 Primary

  the conductive layers comprising transition metals · CPC title