Photovoltaic device with oxide layer
US-9640679-B2 · May 2, 2017 · US
US2025282677A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025282677-A1 |
| Application number | US-202318861900-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 3, 2023 |
| Priority date | May 3, 2022 |
| Publication date | Sep 11, 2025 |
| Grant date | — |
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A chemical vapor deposition process for forming a tin oxide coating includes providing a moving glass substrate. A gaseous mixture is formed and includes at least one tin compound, at least one oxygen-containing molecule, and at least one sulfur-containing compound. The gaseous mixture is directed toward and along the glass substrate. The gaseous mixture is reacted to form the tin oxide coating over the glass substrate.
Opening claim text (preview).
1 .- 38 . (canceled) 39 . A chemical vapor deposition method for forming a tin oxide coating, comprising: providing a glass substrate; forming a precursor gaseous mixture comprised of at least one tin compound, a first oxygen-containing molecule, and at least one sulfur-containing compound; directing the precursor gaseous mixture toward and along the glass substrate; and reacting the precursor gaseous mixture to form the tin oxide coating over the glass substrate. 40 . The method according to claim 39 , wherein the at least one tin compound is at least one of dimethyltin dichloride, diethyltin dichloride, dibutyltin diacetate, tetra methyl tin, methyltin trichloride, triethytin chloride, trimethyltin chloride, ethyltin trichloride, propyltin trichloride, isopropyltin trichloride, sec-butyltin trichloride, t-butyltin trichloride, phenyltin trichloride, and carbethoxyethyltin trichloride, optionally wherein the at least one tin compound comprises dimethyltin dichloride. 41 . The method according to claim 39 , wherein the at least one sulfur-containing compound is an organic sulfur-containing compound, wherein the at least one sulfur-containing compound optionally is at least one of dimethyl sulfoxide and di-tert-butyl disulfide, and optionally wherein the at least one sulfur-containing compound is dimethyl sulfoxide. 42 . The method according to claim 39 , wherein a temperature of the glass substrate is at least 750° F. (399° C.) when the precursor gaseous mixture is reacted during the chemical vapor deposition process, and optionally wherein a temperature of the glass substrate is between about 840° F. (449° C.) and about 1300° F. (704° C.) when the precursor gaseous mixture is reacted during the chemical vapor deposition process. 43 . The method according to claim 39 , wherein the glass substrate comprises soda-lime-silica glass and/or wherein the glass substrate is formed by a float glass process. 44 . The method according to claim 39 , wherein the at least one sulfur-containing compound is added to the precursor gaseous mixture at a rate of at least 3 cc/min, optionally wherein the at least one sulfur-containing compound is added to the precursor gaseous mixture at a rate in range of about 3 cc/min to about 15 cc/min. 45 . The method according to claim 39 , wherein the precursor gaseous mixture is reacted over the glass substrate at essentially atmospheric pressure and/or wherein the glass substrate is moving when the tin oxide coating is deposited. 46 . The method according to claim 39 , wherein the tin oxide coating is an outermost layer of a coated glass article and/or wherein the tin oxide coating is formed over a previously deposited layer on the glass substrate. 47 . The method according to claim 39 , wherein the tin oxide coating has a thickness in a range of about 1200 Angstroms to about 1800 Angstroms, preferably in a range of about 1400 Angstroms to about 1625 Angstroms and/or wherein the first oxygen-containing molecule is molecular oxygen. 48 . The method according to claim 39 , wherein the tin oxide coating has a thickness in a range of about 1625 Angstroms to about 3000 Angstroms or wherein the tin oxide coating has a thickness in a range of about 25 Angstroms to about 2750 Angstroms. 49 . The method according to claim 39 , wherein the tin oxide coating has a sheet resistance in a range of about 250 ohms/square and 1000 ohms/square or wherein the tin oxide coating has a sheet resistance in a range of about 1250 ohms/square and 2250 ohms/square. 50 . The method according to claim 39 , wherein the precursor gaseous mixture further comprises a second oxygen-containing molecule, optionally wherein the second oxygen-containing molecule is water vapor. 51 . The method according to claim 50 , wherein the first oxygen-containing molecule is molecular oxygen and the second oxygen-containing molecule is water vapor and/or wherein the at least one tin compound is dimethyltin dichloride, the first oxygen-containing molecule is molecular oxygen, and the at least one sulfur-containing compound is dimethyl sulfoxide. 52 . The method according to claim 39 , wherein the precursor gaseous mixture further comprises a second oxygen-containing molecule, and wherein the at least one tin compound is dimethyltin dichloride, the first oxygen-containing molecule is molecular oxygen, the second oxygen-containing molecule is water vapor, and the at least one sulfur-containing compound is dimethyl sulfoxide and/or wherein the tin oxide coating is pyrolytic. 53 . The method according to claim 39 , wherein the precursor gas mixture further comprises at least one fluorine-containing compound, optionally wherein the at least one fluorine-containing compound is at least one of hydrofluoric acid and trifluoroacetic acid. 54 . The method according to claim 39 , wherein the precursor gaseous mixture further comprises a second oxygen-containing molecule and at least one fluorine- containing compound, and wherein the at least one tin compound is dimethyltin dichloride, the first oxygen-containing molecule is molecular oxygen, the second oxygen-containing molecule is water vapor, the at least one sulfur-containing compound is dimethyl sulfoxide, and the at least one fluorine-containing compound is hydrofluoric acid and/or wherein the tin oxide coating has a thickness in a range of about 3000 Angstroms to about 5000 Angstroms, preferably in a range of about 3800 Angstroms to about 4800 Angstroms. 55 . The method according to claim 39 , wherein the tin oxide coating has a sheet resistance in a range of about 8 ohms/square to about 14 ohms/square, or wherein the tin oxide coating has a sheet resistance in a range of about 16 ohms/square to about 20 ohms/square. 56 . The method according to claim 39 , wherein the molecular percentage of the one or more sulfur-containing compounds in the gaseous mixture is between 0.1 vol. % and 1.25 vol. %, preferably between 0.1 vol. % and 0.7 vol. %, more preferably between 0.1 vol. % and 0.5 vol. %, even more preferably between 0.1 vol. % and 0.3 vol. % when the gaseous mixture further comprises a second oxygen-containing molecule, or wherein the molecular percentage of the one or more sulfur-containing compounds in the gaseous mixture may be between 0.1 vol. % and 0.7 vol. % when the gaseous mixture does not comprise a second oxygen-containing molecule. 57 . A method of coating a substrate, comprising: providing a glass substrate; and forming a tin oxide coating on the substrate using a chemical vapor deposition process, wherein the chemical vapor deposition process utilizes a precursor gaseous mixture comprising at least one tin compound, a first oxygen-containing molecule, and at least one sulfur-containing compound, wherein the at least one sulfur-containing compound acts as an accelerant for a reaction which forms the tin oxide coating over the glass substrate. 58 . A coated glass article, comprising: a glass substrate; and a tin oxide coating deposited over the glass substrate by a chemical vapor deposition process utilizing a gaseous mixture comprising at least one tin compound, a first oxygen-containing molecule, and at least one sulfur-containing compound, wherein the sulfur-containing compound acts as an accelerant for a reaction which forms the tin oxide coating over the glass substrate.
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