Micro-wire touch screen with unpatterned conductive layer
US-2015084907-A1 · Mar 26, 2015 · US
US2016364041A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016364041-A1 |
| Application number | US-201514895454-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 12, 2015 |
| Priority date | Dec 25, 2014 |
| Publication date | Dec 15, 2016 |
| Grant date | — |
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The present disclosure provides a method for manufacturing a touch panel, the touch panel, a touch screen and a display device. The method includes steps of: forming, on a transparent substrate, a non-opaque film layer with a micro-pattern; and forming a touch panel electrode on the non-opaque film layer. The non-opaque film layer is configured to vanish a shadow of the touch panel electrode.
Opening claim text (preview).
1 . A method for manufacturing a touch panel, comprising steps of: forming, on a transparent substrate, a non-opaque film layer with a micro-pattern; and forming a touch panel electrode on the non-opaque film layer, wherein the non-opaque film layer is configured to vanish a shadow of the touch panel electrode. 2 . The method according to claim 1 , wherein the micro-pattern is of a regular shape. 3 . The method according to claim 1 , wherein the step of forming on the transparent substrate the non-opaque film layer with the micro-pattern comprises: forming the non-opaque film layer on the transparent substrate, and etching the non-opaque film layer to form the micro-pattern. 4 . The method according to claim 1 , wherein the non-opaque film layer is an optical anti-reflection film layer. 5 . The method according to claim 1 , wherein prior to the step of forming the touch panel electrode on the non-opaque film layer, the method further comprises forming an ink border on the non-opaque film layer with the micro-pattern, and subsequent to the step of forming the touch panel electrode on the non-opaque film layer, the method further comprises forming a planarization layer on the transparent substrate with the touch panel electrode. 6 . The method according to claim 1 , wherein the touch panel electrode is an indium tin oxide (ITO) electrode, the step of forming the touch panel electrode on the non-opaque film layer further comprises forming the touch panel electrode within a predetermined temperature range, and the predetermined temperature range is from 200° C. to 250° C. inclusively. 7 . A touch panel, comprising: a transparent substrate; a non-opaque film layer with a micro-pattern and formed on a transparent substrate; and a touch panel electrode formed on the non-opaque film layer, wherein the non-opaque film layer is configured to vanish a shadow of the touch panel electrode. 8 . The touch panel according to claim 7 , wherein the micro-pattern is of a regular shape. 9 . The touch panel according to claim 7 , wherein the non-opaque film layer is an optical anti-reflection film layer. 10 . The touch panel according to claim 7 , further comprising: an ink border formed on the non-opaque film layer with the micro-pattern; and a planarization layer formed on the transparent substrate with the touch panel electrode. 11 . The touch panel according to claim 7 , wherein the touch panel electrode is an indium tin oxide (ITO) electrode formed on the non-opaque film layer within a predetermined temperature range, and the predetermined temperature range is from 200° C. to 250° C. inclusively. 12 . The touch panel according to claim 7 , wherein the touch panel is a one glass solution (OGS) capacitive touch panel. 13 . A touch screen, comprising the touch panel according to claim 7 . 14 . A display device, comprising the touch screen according to claim 13 . 15 . The method according to claim 2 , wherein the step of forming on the transparent substrate the non-opaque film layer with the micro-pattern comprises: forming the non-opaque film layer on the transparent substrate, and etching the non-opaque film layer to form the micro-pattern. 16 . The method according to claim 2 , wherein the non-opaque film layer is an optical anti-reflection film layer. 17 . The method according to claim 2 , wherein prior to the step of forming the touch panel electrode on the non-opaque film layer, the method further comprises forming an ink border on the non-opaque film layer with the micro-pattern, and subsequent to the step of forming the touch panel electrode on the non-opaque film layer, the method further comprises forming a planarization layer on the transparent substrate with the touch panel electrode. 18 . The method according to claim 2 , wherein the touch panel electrode is an ITO electrode, the step of forming the touch panel electrode on the non-opaque film layer further comprises forming the touch panel electrode within a predetermined temperature range, and the predetermined temperature range is from 200° C. to 250° C. inclusively. 19 . The touch panel according to claim 8 , wherein the non-opaque film layer is an optical anti-reflection film layer. 20 . The touch panel according to claim 8 , further comprising: an ink border formed on the non-opaque film layer with the micro-pattern; and a planarization layer formed on the transparent substrate with the touch panel electrode.
In2O3/SnO2 · CPC title
Layers comprising indium tin oxide [ITO] · CPC title
by sputtering · CPC title
Sputtering · CPC title
by capacitive means · CPC title
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