Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-2025271156-A1
Application number	US-202519058679-A
Country	US
Kind code	A1
Filing date	Feb 20, 2025
Priority date	Feb 22, 2024
Publication date	Aug 28, 2025
Grant date	—

Abstract

A substrate processing apparatus includes a reaction tube having a first pipe axis extending in a vertical direction, a vacuum pipe provided to be spaced horizontally apart from the reaction tube and having a second pipe axis parallel to the first pipe axis, an exhaust duct having a flow path configured to bring an interior of the reaction tube into communication with an interior of the vacuum pipe, and a housing configured to accommodate the reaction tube, the vacuum pipe, and the exhaust duct therein.

First claim

What is claimed is:

1 . A substrate processing apparatus, comprising:
a reaction tube having a first pipe axis extending in a vertical direction; a vacuum pipe provided to be spaced horizontally apart from the reaction tube and having a second pipe axis parallel to the first pipe axis; an exhaust duct having a flow path configured to bring an interior of the reaction tube into communication with an interior of the vacuum pipe; and a housing configured to accommodate the reaction tube, the vacuum pipe, and the exhaust duct therein.

2 . The substrate processing apparatus of claim 1 , wherein the vacuum pipe has a cylindrical shape with a ceiling and a lower end which is opened, and
wherein the lower end of the vacuum pipe is connected to an exhaust device.

3 . The substrate processing apparatus of claim 1 , wherein a flow path cross-sectional area of the vacuum pipe is 0 . 7 times or more a flow path cross-sectional area of the exhaust duct.

4 . The substrate processing apparatus of claim 1 , wherein each of the reaction tube and the vacuum pipe has a cylindrical shape, and
wherein, in a cross-sectional view perpendicular to the first pipe axis and the second pipe axis, a relationship of L 1 >L 2 >L 3 is satisfied, where L 1 is an inner diameter of the reaction tube, L 2 is an inner diameter of the vacuum pipe, and L 3 is a flow path width of the exhaust duct.

5 . The substrate processing apparatus of claim 1 , wherein the flow path includes a plurality of divided flow paths provided to be spaced apart from each other along the vertical direction.

6 . The substrate processing apparatus of claim 5 , further comprising:
a substrate holder accommodated in the interior of the reaction tube, wherein the substrate holder includes a top plate and a bottom plate provided parallel to each other, wherein the substrate holder is configured to hold a plurality of substrates arranged in a horizontal posture in multiple stages in the vertical direction between the top plate and the bottom plate, wherein the plurality of divided flow paths include a first divided flow path provided in a height region above the top plate of the substrate holder, and a second divided flow path provided in a height region below the top plate and above the bottom plate of the substrate holder, and wherein a flow path cross-sectional area of the first divided flow path is smaller than a flow path cross-sectional area of the second divided flow path.

7 . The substrate processing apparatus of claim 6 , wherein each of the plurality of substrates held by the substrate holder is positioned at a same height as one of the plurality of divided flow paths.

Assignees

• Tokyo Electron Ltd

Inventors

• Matsuyama Nobuhiro
• Shimada Koichi
• Yoshida Takashi
• Taniyama Tomoshi

Classifications

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title