Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-2025218762-A1
Application number	US-202419005286-A
Country	US
Kind code	A1
Filing date	Dec 30, 2024
Priority date	Dec 29, 2023
Publication date	Jul 3, 2025
Grant date	—

Abstract

The present invention provides a substrate drying method and a substrate drying apparatus. The substrate drying method includes a pressurizing step, a processing step, and a depressurizing step, in which the pressurizing step includes a first supply step of supplying supercritical fluid at a first temperature and a second supply step of supplying, thereafter, the supercritical fluid at a second temperature higher than the first temperature. Thereafter, in the processing step, a substrate is processed with the supercritical fluid by supplying the supercritical fluid at a third temperature the same as or higher than the second temperature.

First claim

1 . A substrate processing method, comprising:
a loading step of loading a substrate into a processing space; a pressurizing step of pressurizing the processing space to a first pressure by supplying supercritical fluid to the processing space after the loading step; a processing step of processing the substrate in the processing space by supplying the supercritical fluid to the processing space after the pressurizing step; a depressurizing step of depressurizing the processing space to a second pressure lower than the first pressure after the processing step; and an unloading step of unloading the substrate from the processing space after the depressurizing step, wherein the pressurizing step comprises: a first supply step of supplying the supercritical fluid at a first temperature to the processing space to a third pressure lower than the first pressure; and a second supply step of supplying the supercritical fluid at a second temperature higher than the first temperature to the processing space when the pressure of the processing space reaches the third pressure.

2 . The method of claim 1 , wherein, in the processing step, the supercritical fluid is supplied to the processing space at a third temperature higher than the first temperature.

3 . The method of claim 2 , wherein the third temperature is the same as the second temperature.

4 . The method of claim 2 , wherein the third temperature is higher than the second temperature.

5 . The method of claim 1 , wherein the third pressure is higher than critical pressure of the supercritical fluid.

6 . The method of claim 1 , wherein a position of the supercritical fluid that is supplied to the processing space in the processing step and a position of the supercritical fluid that is supplied to the processing space in the pressurizing step are different from each other.

7 . The method of claim 6 , wherein, in the pressurizing step, the supercritical fluid is supplied to the processing space at a position lower than the substrate disposed in the processing space.

8 . The method of claim 7 , wherein, in the processing step, the supercritical fluid is supplied to the processing space at a position higher than the substrate disposed in the processing space.

9 . The method of claim 1 , wherein the supercritical fluid is carbon dioxide.

10 . A substrate processing apparatus, comprising:
a body providing a processing space for processing a substrate; a supporting unit supporting the substrate in the processing space; a fluid supply unit supplying supercritical fluid to the processing space; an exhaust unit exhausting fluid in the processing space; and a control unit controlling the fluid supply unit, wherein the fluid supply unit comprises: a fluid supply line supplying supercritical fluid to the processing space from a fluid supplier; and a heating unit installed in the fluid supply line and heating the supercritical fluid, the control unit controls the fluid supply unit and the exhaust unit such that a pressurizing step of pressurizing the processing space to a first pressure by supplying supercritical fluid to the processing space when a substrate is loaded into the processing space, a processing step of processing the substrate in the processing space using the supercritical fluid supplied to the processing space after the pressurizing step, and a depressurizing step of depressurizing the processing space to a second pressure lower than the first pressure are sequentially performed, and the control unit controls the fluid supply unit such that a first supply step of supplying the supercritical fluid at a first temperature to the processing space to a third pressure lower than the first pressure in the pressurizing step, and a second supply step of supplying the supercritical fluid at a second temperature higher than the first temperature to the processing space when the pressure of the processing space reaches a set temperature are sequentially performed.

11 .- 19 . (canceled)

20 . A substrate processing method, comprising:
a liquid processing step of liquid-processing a substrate by supplying a processing liquid to the substrate in a liquid processing chamber; a transfer step of transferring the substrate into a drying chamber after the liquid processing step; and a drying step of drying the substrate using supercritical fluid in the drying chamber after the transferring step, wherein the drying step comprises: a loading step of loading a substrate into a processing space provided in the drying chamber; a pressurizing step of pressurizing the processing space to a first pressure by supplying supercritical fluid to the processing space after the loading step; a processing step of processing the substrate in the processing space using the supercritical fluid supplied to the processing space after the pressurizing step; a depressurizing step of depressurizing the processing space to a second pressure lower than the first pressure after the processing step; and an unloading step of unloading the substrate from the processing space after the depressurizing step, wherein the pressurizing step comprises a first supply step and a second supply step, wherein the pressurizing step comprises: a first supply step of supplying the supercritical fluid at a first temperature to the processing space at a height lower than the substrate to a third pressure lower than the first pressure; and a second supply step of supplying the supercritical fluid at a second temperature higher than the first temperature to the processing space at a height higher than the substrate when the pressure of the processing space reaches the third pressure, the supercritical fluid is supplied at a third temperature to processing space in the processing step, and the third temperature is higher than the first temperature and is the same as or higher than the second temperature.

Assignees

• Semes Co Ltd

Inventors

• Gwon Hye Bin
• Yoon Do Hyeon
• Park Mi So
• Im Yong Joon

Classifications

• H10P72/0408

  for drying · CPC title

• H10P70/80 Primary

  Cleaning only by supercritical fluids · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title