Solder reflow apparatus and method of manufacturing an electronic device

US2025167166A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2025167166-A1
Application numberUS-202519027974-A
CountryUS
Kind codeA1
Filing dateJan 17, 2025
Priority dateAug 3, 2022
Publication dateMay 22, 2025
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An apparatus includes: a vapor generating chamber configured to accommodate a heat transfer fluid and to be filled with saturated vapor generated by the heat transfer fluid; a heater configured to heat the heat transfer fluid in the vapor generating chamber; a substrate stage configured to be movable upward or downward in the vapor generating chamber and to support a substrate on which an electronic device is mounted via a solder. The apparatus also includes at least one mesh plate extending in a horizontal direction in the vapor generating chamber. The at least one mesh plate includes a plurality of openings through which the vapor moves.

First claim

Opening claim text (preview).

1 . (canceled) 2 . A method of manufacturing an electronic device, the method comprising: providing a vapor generating chamber that accommodates a heat transfer fluid; providing a substrate stage within the vapor generating chamber; loading a substrate on the substrate stage, wherein the electronic device is mounted on the substrate via a solder; providing at least one mesh plate that extends in a horizontal direction in the vapor generating chamber, wherein an inner space of the vapor generating chamber is divided, via the at least one mesh plate, into an upper zone and a lower zone; heating the heat transfer fluid to generate saturated vapor within the vapor generating chamber; maintaining a first temperature at the upper zone and a second temperature at the lower zone, wherein the second temperature is higher than the first temperature; and moving the substrate on the substrate stage through the upper zone and the lower zone, to thereby obtain a desired solder temperature profile. 3 . The method of claim 2 , wherein the at least one mesh plate includes a plurality of cover members that are operable in a retractable manner to allow movement of the substrate stage. 4 . The method of claim 3 , wherein the at least one mesh plate includes: a pair of first cover members spaced apart from each other to allow the movement of the substrate stage; and second cover members respectively installed to be movable on the pair of first cover members to block the movement of the substrate stage. 5 . The method of claim 3 , wherein the at least one mesh plate includes cover members having a telescopic structure that operates in the retractable manner. 6 . The method of claim 2 , wherein the at least one mesh plate includes a first plate and a second plate that are sequentially arranged from a bottom of the vapor generating chamber such that a first space under the first plate is the lower zone, a second space above the second plate is the upper zone, and a third space between the first plate and the second plate is a middle zone, and wherein maintaining the first temperature at the upper zone and the second temperature further comprises maintaining a third temperature at the middle zone, wherein the third temperature is higher than the first temperature and is lower than the second temperature. 7 . The method of claim 6 , wherein the first plate includes a plurality of first openings that have a first size, and the second plate includes a plurality of second openings that have a second size smaller than the first size. 8 . The method of claim 7 , wherein a first opening area of a first opening in the plurality of first openings is greater than a second opening area of a second opening in the plurality of second openings. 9 . The method of claim 6 , wherein the at least one mesh plate further includes a third plate disposed under the first plate or above the second plate. 10 . The method of claim 9 , wherein the third plate under the first plate includes a plurality of third openings that have a third size. 11 . The method of claim 2 , wherein the substrate includes a package substrate, and the electronic device includes a semiconductor chip. 12 . A method of manufacturing a semiconductor package, the method comprising: disposing an electronic device on a substrate via a solder; loading the substrate on a substrate stage within a vapor generating chamber that accommodates a heat transfer fluid on a bottom of the vapor generating chamber; providing a first plate and a second plate that are sequentially arranged from the bottom of the vapor generating chamber, wherein an inner space of the vapor generating chamber is divided, via the first plate and the second plate, into an upper zone, a middle zone and a lower zone; heating the heat transfer fluid to generate saturated vapor within the vapor generating chamber; maintaining a first temperature at the upper zone, a second temperature at the middle zone and a third temperature at the lower zone, wherein the third temperature is higher than the second temperature and the second temperature is higher than the first temperature; and moving the substrate on the substrate stage through the upper zone, the middle zone and the lower zone, to thereby obtain a desired solder temperature profile. 13 . The method of claim 12 , wherein the first plate includes a plurality of first openings that have a first size, and the second plate includes a plurality of second openings that have a second size smaller than the first size. 14 . The method of claim 13 , wherein a first opening area of a first opening in the plurality of first openings is greater than a second opening area of a second opening in the plurality of second openings. 15 . The method of claim 13 , further including providing a third plate under the first plate or above the second plate. 16 . The method of claim 15 , wherein the third plate under the first plate includes a plurality of third openings that have a third size greater than the first size. 17 . The method of claim 15 , wherein the third plate disposed above the second plate includes a plurality of third openings that have a third size smaller than the second size. 18 . The method of claim 12 , wherein each of the first plate and the second plate includes a plurality of cover members that are operable in a retractable manner to allow movement of the substrate stage. 19 . The method of claim 18 , further comprising providing at least one mesh plate, wherein the at least one mesh plate includes: a pair of first cover members spaced apart from each other to allow the movement of the substrate stage; and second cover members respectively installed to be movable on the pair of first cover members to block the movement of the substrate stage. 20 . The method of claim 12 , wherein the heat transfer fluid includes a Galden solution. 21 . A method of manufacturing a semiconductor package, comprising: providing a substrate stage within a vapor generating chamber that accommodates a heat transfer fluid and in which a saturated vapor generated from the heat transfer fluid is distributed based on a density difference; loading a substrate on the substrate stage, wherein and electronic device is mounted via a solder; providing at least one mesh plate that extends in a horizontal direction in the vapor generating chamber to divide an inner space of the vapor generating chamber into an upper zone and a lower zone, wherein the at least one mesh plate includes a plurality of openings through which the vapor moves and a plurality of cover members that are operable in a retractable manner to allow movement of the substrate stage; heating the heat transfer fluid to generate the saturated vapor within the vapor generating chamber; and moving the substrate on the substrate stage through the upper zone and the lower, to thereby obtain a desired solder temperature profile.

Assignees

Inventors

Classifications

  • Means for moving chips, wafers or other parts, e.g. conveyor belts · CPC title

  • Means for applying energy, e.g. ovens or lasers · CPC title

  • Means for controlling the bonding environment, e.g. valves or vacuum pumps · CPC title

  • of bump connectors · CPC title

  • Apparatus chuck · CPC title

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Frequently asked questions

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What does patent US2025167166A1 cover?
An apparatus includes: a vapor generating chamber configured to accommodate a heat transfer fluid and to be filled with saturated vapor generated by the heat transfer fluid; a heater configured to heat the heat transfer fluid in the vapor generating chamber; a substrate stage configured to be movable upward or downward in the vapor generating chamber and to support a substrate on which an elect…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification B23K1/015. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu May 22 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).