Selective metal Capping with Metal Halide enhancement

Patent metadata

Field	Value
Publication number	US-2025157824-A1
Application number	US-202418947949-A
Country	US
Kind code	A1
Filing date	Nov 14, 2024
Priority date	Nov 15, 2023
Publication date	May 15, 2025
Grant date	—

Abstract

Embodiments of the present disclosure generally relate to methods and processes for selectively depositing a metal fill layer into a feature on the surface of a semiconductor structure. In some embodiments, a method of forming a contact structure includes performing a preclean operation on a contact structure to form a precleaned contact structure. The contact structure includes a silicon-based portion exposed in a cavity of a substrate. The method further includes depositing a metal layer over the precleaned contact structure to form a deposited contact structure. The method further includes introducing a metal halide precursor to the deposited contact structure to at least partially remove the second layer from the deposited contact structure to form an etched contact structure. The method further includes depositing a metal fill layer onto the first layer to form a filled contact structure. The deposited metal fill layer comprises a super conformal profile.

First claim

We claim:

1 . A method of forming a contact structure, the method comprising:
performing a preclean operation on a contact structure to form a precleaned contact structure, the contact structure comprising:
a silicon-based portion exposed in a cavity of a substrate, the substrate comprising a bottom surface of the cavity, an interior sidewall of the cavity, and a top surface, and
a liner layer disposed on the interior sidewall of the cavity;
depositing a metal layer over the precleaned contact structure to form a deposited contact structure, wherein:
a first layer is deposited on the bottom surface of the cavity, and
a second layer is deposited onto the liner layer and the top surface;
introducing a metal halide precursor to the deposited contact structure to at least partially remove the second layer from the deposited contact structure to form an etched contact structure; and depositing a metal fill layer onto the first layer to form a filled contact structure, wherein the deposited metal fill layer comprises a super conformal profile.

2 . The method of claim 1 , wherein the metal halide precursor is selected from the group consisting of MoCl 5 , WCl 5 , TiCl 5 , and combinations thereof.

3 . The method of claim 1 , wherein the first layer comprises TiSi and the second layer comprises a combination of Ti, TiSi, and TiN.

4 . The method of claim 1 , wherein depositing the metal fill layer comprises a fluorine-free tungsten (FFW) process comprising introducing a tungsten precursor to the etched contact structure.

5 . The method of claim 4 , wherein the tungsten precursor is selected from the group consisting of WCl 5 , WCl 6 , and combinations thereof.

6 . The method of claim 4 , wherein the FFW process includes a deposition process selected from the group consisting of chemical vapor deposition (CVD) process, a pulsed CVD process, and an atomic layer deposition (ALD) process.

7 . A method of forming a contact structure, the method comprising:
performing a preclean operation on a contact structure to form a precleaned contact structure, the contact structure comprising:
a silicon-based portion exposed in a cavity of a substrate, the substrate comprising a bottom surface of the cavity defined by a lowermost exposed surface of the cavity, an interior sidewall of the cavity, and a top surface,
a liner layer disposed on the interior sidewall of the cavity, and
a volume of the cavity, the volume of the cavity being defined by the silicon based portion exposed in the cavity of the substrate and the liner layer disposed on the interior sidewall of the cavity;
depositing a metal layer over the precleaned contact structure to form a deposited contact structure, wherein:
a first layer is deposited on the bottom surface of the cavity, and
a second layer is deposited onto the liner layer and the top surface;
introducing a metal halide precursor to the deposited contact structure to at least partially remove the second layer from the deposited contact structure to form an etched contact structure; and performing a cyclic processing operation to deposit a selective metal fill layer on the etched contact structure to form a bottom-up metal filled contact structure, the cyclic processing operation comprising a first processing operation and a second processing operation.

8 . The method of claim 7 , wherein the first processing operation comprises depositing a metal fill layer into the cavity of the substrate, the deposited metal fill layer comprising a first metal layer disposed on the bottom surface of the cavity and a second metal layer disposed on the liner layer above the first metal layer.

9 . The method of claim 7 , wherein the second processing operation comprises removing the second metal layer from the deposited metal layer.

10 . The method of claim 7 , wherein the second processing operation is performed subsequent the first processing operation.

11 . The method of claim 7 , wherein the first processing operation comprises fluorine-free tungsten (FFW) process, the FFW process comprising introducing a tungsten precursor to the cavity of the substrate.

12 . The method of claim 11 , wherein the tungsten precursor is selected from the group consisting of WCl 5 , WCl 6 , and combinations thereof.

13 . The method of claim 11 , wherein the FFW process includes a deposition process selected from the group consisting of chemical vapor deposition (CVD) process, a pulsed CVD process, and an atomic layer deposition (ALD) process.

14 . The method of claim 7 , wherein the second processing operation comprises introducing a molybdenum halide compound to the cavity of the substrate.

15 . The method of claim 14 , wherein the molybdenum halide compound comprises MoCl 5 .

16 . The method of claim 7 , wherein the cyclic processing operation is performed for 2 cycles to 8 cycles.

17 . The method of claim 7 , wherein the cyclic processing operation is performed for a number of cycles such that the selective metal fill layer occupies about 10% or more of the volume of the cavity.

18 . A substrate processing system, comprising:
a processing chamber having a first pedestal and a second pedestal; and a controller coupled to the processing chamber, configured to:
introduce a metal halide precursor to a substrate to selectively remove a metal layer from the substrate, the substrate comprising:
a first metal layer disposed on a bottom surface of a cavity in the substrate, the bottom surface of the cavity being defined by a lowermost exposed surface of the cavity, and
a second metal layer disposed on an interior sidewall of the cavity and a top surface of the substrate;

conformally deposit a metal gapfill layer into the cavity, the metal gapfill layer comprising a first metal layer disposed on the bottom surface of the cavity and a second metal layer disposed on the interior sidewall of the cavity above the first metal layer; and
selectively remove the second metal layer.

19 . The substrate processing system of claim 18 , wherein the first pedestal and the second pedestal are positioned on a susceptor assembly within the processing chamber, the susceptor assembly configured to rotate within the processing chamber.

20 . The substrate processing system of claim 18 , wherein the processing chamber further comprises a gas distribution assembly, the gas distribution assembly comprising a first gas injection unit and a second gas injection unit.

Assignees

• Applied Materials Inc

Inventors

• Zhang Shumao
• Zhu Qihao
• Wu Liqi
• Hsu Chih-Hsun
• Lu Jiang
• Wang Rongjun

Classifications

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/054

  by selectively removing parts thereof (H10W20/034 takes precedence) · CPC title