Methods for forming low resistivity contacts
US-12588443-B2 · Mar 24, 2026 · US
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Lu Jiang patents
Lu Jiang is listed as an inventor on 61 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lu Jiang |
| Total patents | 61 |
| First publication | May 14, 2015 |
| Latest publication | Mar 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of selective metal deposition using separated reactant activation and plasma discharging zone
US-12565702-B2 · Mar 3, 2026 · US
Method of in-situ selective metal removal via gradient oxidation for gapfill
US-12568804-B2 · Mar 3, 2026 · US
Method of forming a MEOL contact structure
US-12538542-B2 · Jan 27, 2026 · US
Method of bottom reaction efficiency modulation for ald and ale
US-2025379059-A1 · Dec 11, 2025 · US
Cyclic plasma and thermal process to improve pecvd ti silicide deposition selectivity
US-2025376762-A1 · Dec 11, 2025 · US
Tuning deposition selectivity
US-2025379031-A1 · Dec 11, 2025 · US
Methods for forming low resistivity contacts
US-2025372449-A1 · Dec 4, 2025 · US
Methods for forming low resistivity contacts
US-2025372448-A1 · Dec 4, 2025 · US
Methods for forming low resistivity contacts
US-2025372450-A1 · Dec 4, 2025 · US
Recent patents
Latest publications not already listed above.
Thermal cvd of titanium silicide methods to form semiconductor structures
US-2025174456-A1 · May 29, 2025 · US
Selective metal Capping with Metal Halide enhancement
US-2025157824-A1 · May 15, 2025 · US
Substrate support for a substrate processing chamber
US-D1071886-S · Apr 22, 2025 · US
Oligomer film for bottom-up gap fill processes
US-2025125195-A1 · Apr 17, 2025 · US
Selective metal removal with flowable polymer
US-12272551-B2 · Apr 8, 2025 · US
Surface treatment enabling super-conformal metal cap profile on middle of-line (mol) silicides
US-2025112091-A1 · Apr 3, 2025 · US
Selective capping for gate-all-around field effect transistors
US-2025079239-A1 · Mar 6, 2025 · US
Selective metal capping processes for a junction silicide
US-2025054767-A1 · Feb 13, 2025 · US
Selective bottom-up metal fill/cap on junction silicide by selective metal removal
US-2025054812-A1 · Feb 13, 2025 · US
Bottom-up gap fill processes for semiconductor substrates
US-2025006552-A1 · Jan 2, 2025 · US
Method of forming a meol contact structure
US-2024379768-A1 · Nov 14, 2024 · US
Methods for forming low resistivity contacts
US-2024379363-A1 · Nov 14, 2024 · US
Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integration
US-2024371654-A1 · Nov 7, 2024 · US
Low-energy underlayer for room temperature physical vapor deposition of electrically conductive features
US-2024363407-A1 · Oct 31, 2024 · US
Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone
US-2024191354-A1 · Jun 13, 2024 · US
Process chamber with pressure charging and pulsing capability
US-2024153790-A1 · May 9, 2024 · US
Methods for Forming Low Resistivity Contacts
US-2024105444-A1 · Mar 28, 2024 · US
Treatment of tungsten surface for tungsten gap-fill
US-2023420295-A1 · Dec 28, 2023 · US
Selective metal removal with flowable polymer
US-2023386833-A1 · Nov 30, 2023 · US
Methods and apparatus for processing a substrate
US-2023377892-A1 · Nov 23, 2023 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Applied Materials Inc | 61 |
| Lu Jiang | 2 |
| Ma Paul | 2 |
| Aubuchon Joseph F | 2 |
| Ha Hyoung-Chan | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P14/432 | 26 |
| H10W20/033 | 22 |
| H10W20/057 | 18 |
| H10W20/425 | 17 |
| H10W20/056 | 16 |