Methods of metrology

US2025147436A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2025147436-A1
Application numberUS-202318832408-A
CountryUS
Kind codeA1
Filing dateJan 23, 2023
Priority dateFeb 21, 2022
Publication dateMay 8, 2025
Grant date

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  5. First independent claim

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Abstract

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A method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method includes: obtaining layout data relating to a layout of a pattern to be applied to the at least one structure, the pattern including the at least one structure; and obtaining a trained model, having been trained on metrology data and the layout data to infer a value and/or probability metric relating to a parameter of interest from at least the layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate. A value and/or probability metric is determined relating to the parameter of interest at one or more locations on the substrate different from the measurement locations from at least layout data using the trained model.

First claim

Opening claim text (preview).

1 . A method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process, the method comprising: obtaining layout data relating to a layout of a pattern to be applied to the at least one structure, the pattern comprising the at least one structure; obtaining a trained computer model, having been trained on metrology data and the layout data to infer a value and/or probability metric relating to the parameter of interest from at least the layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate; and determining, by a hardware computer system, a value and/or probability metric relating to the parameter of interest at one or more locations on the substrate different from the measurement locations from at least the layout data using the trained model. 2 . The method as claimed in claim 1 , wherein the parameter of interest is overlay or edge placement error. 3 . The method as claimed in claim 1 , wherein the trained model has been trained to interpolate the metrology data using the layout data to an expected value for the parameter of interest; and the determining a value and/or probability metric relating to the parameter of interest comprises determining the value for a parameter of interest at one or more locations on the substrate different from the measurement locations from the metrology data and the layout data using the trained model. 4 . The method as claimed in claim 1 , wherein the metrology data comprises after develop inspection metrology data measured by a scatterometer. 5 . The method as claimed in claim 1 , wherein the metrology data comprises after etch inspection metrology data measured subsequent to an etching and/or a polishing step. 6 . The method as claimed in any of claim 1 , wherein the metrology data comprises connectivity e-test data or scanning electron microscope measurement data. 7 . The method as claimed in claim 1 , wherein the layout data comprises a pattern density spatial distribution. 8 . The method as claimed in claim 1 , wherein the determining comprises determining a spatial distribution of the parameter of interest over at least an exposure field. 9 . The method as claimed in claim 1 , wherein the determining uses substrate position data to determine a spatial distribution of the parameter of interest over the substrate, the trained model having been trained per-field based on the substrate location data. 10 . The method as claimed in claim 8 , further comprising using the spatial distribution of the parameter of interest to optimize one or more settings in the manufacturing process and/or identify one or more areas or structures for further inspection. 11 . The method as claimed in claim 1 , further comprising: obtaining training layout data comprising a similar type of data as the layout data; obtaining training metrology data corresponding to the training layout data; and training a machine learning model with the training metrology data and dense layout data to obtain the trained model. 12 . The method as claimed in claim 11 , wherein the training metrology data comprises at least after-etch inspection metrology data measured subsequent to an etching and/or polishing step. 13 . The method as claimed in claim 12 , wherein the training metrology data further comprises after-develop inspection metrology data, and the training comprises training the machine learning model to interpolate a sparse sampling of after-develop inspection metrology data to a denser sampling of after-etch inspection metrology data. 14 . The method as claimed in claim 11 , wherein the layout data and training layout data comprise pattern density images. 15 . (canceled) 16 . A non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least: obtaining layout data relating to a layout of a pattern to be applied to at least one structure formed on a substrate in a manufacturing process, the pattern comprising the at least one structure; obtaining a trained computer model, having been trained on metrology data and the layout data to infer a value and/or probability metric relating to a parameter of interest from at least the layout data, the metrology data relating to a plurality of measurements of the parameter of interest at a respective plurality of measurement locations on the substrate; and determining, by a hardware computer system, a value and/or probability metric relating to the parameter of interest at one or more locations on the substrate different from the measurement locations from at least the layout data using the trained model. 17 . The medium as claimed in claim 16 , wherein the parameter of interest is overlay or edge placement error. 18 . The medium as claimed in claim 16 , wherein the trained model has been trained to interpolate the metrology data using the layout data to an expected value for the parameter of interest; and the instructions configured to cause the computer system to determine a value and/or probability metric relating to the parameter of interest are configured to cause the computer system to determine the value for a parameter of interest at one or more locations on the substrate different from the measurement locations from the metrology data and the layout data using the trained model. 19 . The medium as claimed in claim 16 , wherein the instructions configured to cause the computer system to determine a value and/or probability metric relating to the parameter of interest are configured to cause the computer system to determine a spatial distribution of the parameter of interest over at least an exposure field. 20 . The medium as claimed in claim 16 , wherein the instructions configured to cause the computer system to determine a value and/or probability metric relating to the parameter of interest are configured to cause the computer system to use substrate position data to determine a spatial distribution of the parameter of interest over the substrate, the trained model having been trained per-field based on the substrate location data. 21 . The medium as claimed in claim 16 , wherein the instructions are further configured to cause the computer system to use the spatial distribution of the parameter of interest to optimize one or more settings in the manufacturing process and/or identify one or more areas or structures for further inspection.

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Classifications

  • Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

  • Mask effects on the imaging process · CPC title

  • Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes · CPC title

  • Probabilistic or stochastic networks · CPC title

  • Supervised learning · CPC title

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What does patent US2025147436A1 cover?
A method for determining a parameter of interest relating to at least one structure formed on a substrate in a manufacturing process. The method includes: obtaining layout data relating to a layout of a pattern to be applied to the at least one structure, the pattern including the at least one structure; and obtaining a trained model, having been trained on metrology data and the layout data to…
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G06N3/0464. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu May 08 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).