Laser processing method and laser processing device

Patent metadata

Field	Value
Publication number	US-2025105011-A1
Application number	US-202218726138-A
Country	US
Kind code	A1
Filing date	Aug 22, 2022
Priority date	Jan 28, 2022
Publication date	Mar 27, 2025
Grant date	—

Abstract

A laser processing method including: a first step of preparing a wafer having a first region and a second region; a second step of irradiating the street with a predetermined first laser beam; and a third step of irradiating the street with a predetermined second laser beam after the second step, the first laser beam being a laser beam having processing energy for removing a part of the insulating film in the first region to leave the other part, completely removing the metal structure in the second region, and removing a part of the insulating film in the second region to leave the other part, and the second laser beam being a laser beam having processing energy for completely removing the insulating film in the first region and the insulating film in the second region after the second step.

First claim

1 : A laser processing method comprising:
preparing a wafer including a plurality of functional elements disposed adjacent to each other across a street, the wafer having a first region in which a surface layer of the street includes an insulating film and a second region in which the surface layer includes an insulating film and a metal structure on the insulating film; irradiating the street with a predetermined first laser beam; and irradiating the street with a predetermined second laser beam after the irradiating the street with the predetermined first laser beam, wherein the first laser beam is a laser beam having processing energy for removing a part of the insulating film in the first region to leave another part, completely removing the metal structure in the second region, and removing a part of the insulating film in the second region to leave another part in an irradiation range, and the second laser beam is a laser beam having processing energy for completely removing the insulating film in the first region and the insulating film in the second region after the irradiating the street with the predetermined first laser beam in the irradiation range.

2 : The laser processing method according to claim 1 , wherein the second laser beam is a laser beam having processing energy for digging a part of the substrate included in the wafer after the irradiating the street with the predetermined first laser beam.

3 : The laser processing method according to claim 2 , wherein the second laser beam is a laser beam having processing energy for carving the substrate by 4 μm or less after the irradiating the street with the predetermined first laser beam.

4 : The laser processing method according to claim 2 , further comprising grinding or polishing the substrate to expose a groove formed in the street by irradiation with the second laser beam after the irradiating the street with the predetermined second laser beam.

5 : A laser processing method comprising:
preparing a wafer including a plurality of functional elements disposed adjacent to each other across a street, the wafer having a first region in which a surface layer of the street includes an insulating film and a second region in which the surface layer includes an insulating film and a metal structure on the insulating film; irradiating the street with a laser beam to make the insulating films in the first region and the second region uneven; and irradiating the street with a laser beam to completely removing the insulating films in the first region and the second region after the irradiating the street with the laser beam to make the insulating films in the first region and the second region uneven.

6 : A laser processing apparatus comprising:
a support part configured to support a wafer including a plurality of functional elements disposed adjacent to each other across a street, the wafer having a first region in which a surface layer of the street includes an insulating film and a second region in which the surface layer includes an insulating film and a metal structure on the insulating film; an irradiator configured to irradiate the street with a laser beam; and a controller configured to control the irradiator, wherein the controller is configured to execute first control of controlling the irradiator in such a manner that the street is irradiated with a predetermined first laser beam, and second control that controls the irradiator in such a manner that the street is irradiated with a predetermined second laser beam after the first control, the first laser beam is a laser beam having processing energy for removing a part of the insulating film in the first region to leave another part, completely removing the metal structure in the second region, and removing a part of the insulating film in the second region to leave another part in an irradiation range, and the second laser beam is a laser beam having processing energy for completely removing the insulating film in the first region and the insulating film in the second region after the irradiation with the first laser beam in the irradiation range.

7 : A laser processing apparatus comprising:
a support part configured to support a wafer including a plurality of functional elements disposed adjacent to each other across a street, the wafer having a first region in which a surface layer of the street includes an insulating film and a second region in which the surface layer includes an insulating film and a metal structure on the insulating film; an irradiator configured to irradiate the street with a laser beam; and a controller configured to control the irradiator, wherein the controller is configured to execute first control of controlling the irradiator in such a manner that the street is irradiated with the laser beam to make the insulating films in the first region and the second region uneven, and second control of controlling the irradiator in such a manner that the street is irradiated with the laser beam to completely remove the insulating films in the first region and the second region after the first control.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Sakamoto Takeshi
• SUGIMOTO Yo
• Ogiwara Takafumi
• Kurita Takashi
• Yoshimura Ryo

Classifications

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• B23K26/351

  for trimming or tuning of electrical components · CPC title

• H01L21/268 Primary

  Electricity · mapped topic