Semiconductor device manufacturing method

Patent metadata

Field	Value
Publication number	US-2025046626-A1
Application number	US-202418900891-A
Country	US
Kind code	A1
Filing date	Sep 30, 2024
Priority date	May 22, 2019
Publication date	Feb 6, 2025
Grant date	—

Abstract

A method of producing a semiconductor device including: providing a temporary fixing laminate having a supporting substrate; machining a semiconductor member that is temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of a rear surface of the supporting substrate. A plurality of the irradiation target regions set at the rear surface are sequentially irradiated with light, and each of the irradiation target regions includes a part of the rear surface. The irradiation target regions adjacent to each other partially overlap with each other as reviewed from a direction perpendicular to the rear surface, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

First claim

The invention claimed is:

1 . A method of producing a semiconductor device, the method comprising:
providing a temporary fixing laminate comprising a supporting substrate and a temporary fixing material layer, the supporting substrate comprising a supporting surface and a rear surface opposite to the supporting surface, the temporary fixing material layer being provided on the supporting surface and comprising a resin layer comprising at least one outermost surface of the temporary fixing material layer; temporarily fixing a semiconductor member to the supporting substrate with the temporary fixing material layer interposed therebetween; machining the semiconductor member temporarily fixed to the supporting substrate; and separating the semiconductor member from the supporting substrate by irradiating the temporary fixing laminate with light from a side of the rear surface, wherein at least a part of the temporary fixing material layer is a light absorption layer that generates heat by absorbing the light, a plurality of irradiation target regions set at the rear surface are sequentially irradiated with the light, each of the irradiation target regions includes a part of the rear surface, the light is incoherent light including an infrared ray, the irradiation target regions adjacent to each other partially overlap with each other as viewed from a direction perpendicular to the rear surface so that the separation of the machined semiconductor member from the supporting substrate is facilitated, and a region in which the plurality of the irradiation target regions are combined includes the entire rear surface.

2 . The method according to claim 1 , wherein a light source of the incoherent light is a xenon lamp.

3 . The method according to claim 1 , wherein the temporary fixing material layer comprises, as the light absorption layer, a metal layer that is a separate layer from the resin layer.

4 . The method according to claim 1 , wherein the plurality of the irradiation target regions are set at the rear surface are sequentially irradiated with the light by rotating the supporting substrate in a state where a light source of the light is fixed.

Assignees

• Resonac Corp

Inventors

• AKASU Yuta
• Miyazawa Emi
• Kawamori Takashi
• Sobue Shogo
• Oyama Yasuyuki

Classifications

• H10P14/6536

  by exposure to radiation, e.g. visible light · CPC title

• H10P14/6528

  In-situ cleaning after layer formation, e.g. removing process residues · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W74/019 Primary

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W74/014 Primary

  using batch processing · CPC title