Molybdenum deposition

Patent metadata

Field	Value
Publication number	US-2025029840-A1
Application number	US-202418907394-A
Country	US
Kind code	A1
Filing date	Oct 4, 2024
Priority date	Nov 19, 2018
Publication date	Jan 23, 2025
Grant date	—

Abstract

Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.

First claim

1 . A method comprising:
depositing a molybdenum (Mo)-containing layer in a feature on a substrate; and depositing tungsten (W) on the Mo-containing layer to thereby fill the feature with tungsten.

2 . The method of claim 1 , further comprising thermally annealing the Mo-containing layer prior to depositing tungsten.

3 . The method of claim 1 , wherein the Mo-containing layer is a template for W grain growth.

4 . The method of claim 1 , wherein the Mo-containing layer is elemental Mo having less than 1 (atomic) % impurities.

5 . The method of claim 1 , wherein the Mo-containing layer is between 1 and 10 nm thick.

6 . The method of claim 1 , wherein the Mo-containing layer overlies a dielectric layer.

7 . The method of claim 1 , wherein the Mo-containing layer is free of fluorine impurities.

8 . The method of claim 1 , further comprising depositing the Mo-containing layer.

9 . The method of claim 8 , wherein the Mo-containing layer is deposited from one or more molybdenum chloride precursors.

10 . The method of claim 9 , wherein the one or more molybdenum chloride precursors are selected from: molybdenum pentachloride (MoCl 5 ), molybdenum dichloride dioxide (MoO 2 Cl 2 ), and molybdenum tetrachloride oxide (MoOCl 4 ).

Assignees

• Lam Res Corp

Inventors

• Van Cleemput Patrick A
• Thombare Shruti Vivek
• Danek Michal

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10P14/418 Primary

  the conductive layers comprising transition metals · CPC title

• H10W20/425 Primary

  Barrier, adhesion or liner layers · CPC title