Cmp safe alignment mark

Patent metadata

Field	Value
Publication number	US-2024387398-A1
Application number	US-202418787820-A
Country	US
Kind code	A1
Filing date	Jul 29, 2024
Priority date	Sep 30, 2020
Publication date	Nov 21, 2024
Grant date	—

Abstract

The current disclosure describes techniques for making an alignment mark on a wafer. A recess is etched in a first surface region of a wafer. A device structure is formed in a second surface region of the wafer. A dielectric layer is deposited on the first surface of the wafer and filling the recess. A first planarization procedure is conducted to planarize the dielectric layer. After the first planarization procedure, a second planarization procedure is conducted to device structures on the second surface region of the wafer.

First claim

1 . A structure, comprising:
a substrate including a surface; a recess in a first region of the surface; a first material in the recess, wherein the first material is different from a material of a first portion of the surface that surrounds the recess and the first material has been treated with an oxygen plasma; and a device structure in a second region of the surface of the substrate.

2 . The structure of claim 1 , comprising, wherein the first portion of the surface has been hardened.

3 . The structure of claim 1 , wherein the first material is silicon oxide.

4 . The structure of claim 1 , wherein the first material is silicon nitride.

5 . The structure of claim 1 , wherein the first layer is a polymer material.

6 . The structure of claim 1 , wherein the first material allows a laser light to pass through.

7 . The structure of claim 1 , comprising an isolation layer in the recess, wherein the first material is on the isolation layer.

8 . The structure of claim 7 , wherein the isolation layer is a dielectric material that is different from the first material.

9 . The structure of claim 1 , comprising a dielectric layer on the recess and the device structure, the dielectric layer is a different material from the first material.

10 . The structure of claim 1 , wherein the first portion is a semiconductor material.

11 . A structure, comprising:
a substrate having a first surface; a first device structure on a first region of the first surface; an alignment mark on a second region of the first surface, the alignment mark including a filling material in a recess; and a dielectric layer directly on the alignment mark, a material composition of the filling material of the alignment mark being different from a material composition of the dielectric layer.

12 . The structure of claim 11 , wherein the filling material is silicon oxide.

13 . The structure of claim 11 , wherein the filling material is silicon nitride.

14 . The structure of claim 11 , wherein the filling material is a polymer material.

15 . The structure of claim 11 , wherein the filling material allows a laser light to pass through.

16 . The structure of claim 11 , wherein the alignment mark includes an isolation layer in the recess, and the filling material is on the isolation layer.

17 . The structure of claim 16 , wherein the isolation layer is a dielectric material that is different from the filling material.

18 . A structure, comprising:
a substrate, a semiconductor layer on the substrate; a recess in a first region of the semiconductor layer; an isolation layer of a first dielectric material in the recess; and a second dielectric material in the recess and on the isolation layer, wherein the second dielectric material is an oxygen treated material.

19 . The structure of claim 18 , wherein the first layer is one or more of silicon oxide, silicon nitride, or a polymer material.

20 . The structure of claim 18 , wherein the first layer allows a laser light to pass through.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsu Huang-Jen
• Su Jheng-Si
• Liu kun-ming
• Shieh Tzi-Yi
• Wu Feng-Inn

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10W46/301

  for alignment · CPC title