Method for manufacturing spin wave excitation/detection structure

US2024341198A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2024341198-A1
Application numberUS-202218292218-A
CountryUS
Kind codeA1
Filing dateJul 25, 2022
Priority dateJul 28, 2021
Publication dateOct 10, 2024
Grant date

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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A method for manufacturing a spin wave excitation/detection structure to excite and detect a spin wave. The method includes: forming an insulating magnetic film on a donor substrate, producing a bonded substrate by bonding a surface of the insulating magnetic film on the donor substrate to a surface of a support substrate via a conductive film, removing the donor substrate from the bonded substrate, and forming a conductive line on the insulating magnetic film. The spin wave excitation/detection structure includes the support substrate, the conductive film provided on the support substrate, the insulating magnetic film provided on the conductive film, and the conductive line provided on the insulating magnetic film. This provides the method that can manufacture the spin wave excitation/detection structure, having a structure with high strength, the spin wave that can be excited with high intensity, and the spin wave that can be excited with broad frequency bandwidth.

First claim

Opening claim text (preview).

1 - 11 . (canceled) 12 . A method for manufacturing a spin wave excitation/detection structure to excite and detect a spin wave, the method comprising the steps of: forming an insulating magnetic film on a donor substrate; producing a bonded substrate by bonding a surface of the insulating magnetic film on the donor substrate to a surface of a support substrate via a conductive film; removing the donor substrate from the bonded substrate; and forming a conductive line on the insulating magnetic film; wherein the spin wave excitation/detection structure comprises the support substrate, the conductive film provided on the support substrate, the insulating magnetic film provided on the conductive film, and the conductive line provided on the insulating magnetic film. 13 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein the conductive film is formed on the support substrate, and the conductive film formed on the support substrate is bonded to the surface of the insulating magnetic film. 14 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein the conductive film is formed on the insulating magnetic film, and the conductive film formed on the insulating magnetic film is bonded to the surface of the support substrate. 15 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein the conductive film is formed on both the support substrate and the insulating magnetic film, a first conductive film formed on the support substrate and a second conductive film formed on the insulating magnetic film are bonded. 16 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein the insulating magnetic film is a magnetic garnet. 17 . The method for manufacturing the spin wave excitation/detection structure according to claim 13 , wherein the insulating magnetic film is a magnetic garnet. 18 . The method for manufacturing the spin wave excitation/detection structure according to claim 14 , wherein the insulating magnetic film is a magnetic garnet. 19 . The method for manufacturing the spin wave excitation/detection structure according to claim 15 , wherein the insulating magnetic film is a magnetic garnet. 20 . The method for manufacturing the spin wave excitation/detection structure according to claim 16 , wherein the insulating magnetic film is an yttrium iron garnet. 21 . The method for manufacturing the spin wave excitation/detection structure according to claim 17 , wherein the insulating magnetic film is an yttrium iron garnet. 22 . The method for manufacturing the spin wave excitation/detection structure according to claim 18 , wherein the insulating magnetic film is an yttrium iron garnet. 23 . The method for manufacturing the spin wave excitation/detection structure according to claim 19 , wherein the insulating magnetic film is an yttrium iron garnet. 24 . The method for manufacturing the spin wave excitation/detection structure according to claim 16 , wherein the donor substrate is a substrate made of a paramagnetic garnet. 25 . The method for manufacturing the spin wave excitation/detection structure according to claim 17 , wherein the donor substrate is a substrate made of a paramagnetic garnet. 26 . The method for manufacturing the spin wave excitation/detection structure according to claim 18 , wherein the donor substrate is a substrate made of a paramagnetic garnet. 27 . The method for manufacturing the spin wave excitation/detection structure according to claim 19 , wherein the donor substrate is a substrate made of a paramagnetic garnet. 28 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein removing the donor substrate from the bonded substrate is performed by grinding and polishing. 29 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , the method further comprising: implanting an ion into the insulating magnetic film to form an ion-implanted surface after forming the insulating magnetic film on the donor substrate, and removing the donor substrate from the bonded substrate by dividing the bonded substrate along the ion-implanted surface after producing the bonded substrate. 30 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein the conductive film and the conductive line contain at least any one of copper, aluminum, gold, silver, platinum, iron, transparent conductor, superconductor, graphene, and magnetic material with conductivity. 31 . The method for manufacturing the spin wave excitation/detection structure according to claim 12 , wherein the support substrate is at least any one of a silicon substrate, a dielectric substrate, a conductive substrate, an insulating substrate, a magnetic substrate, a nonmagnetic substrate, a wood substrate, and a stone substrate.

Assignees

Inventors

Classifications

  • H10P95/00Primary

    Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

  • for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

  • Garnets {(in general H01F1/346; multilayers, e.g. superlattices H01F10/3209; applying magnetic garnet films to substrates by sputtering H01F41/186)} · CPC title

  • Devices controlled by magnetic fields · CPC title

  • Materials of the active region · CPC title

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What does patent US2024341198A1 cover?
A method for manufacturing a spin wave excitation/detection structure to excite and detect a spin wave. The method includes: forming an insulating magnetic film on a donor substrate, producing a bonded substrate by bonding a surface of the insulating magnetic film on the donor substrate to a surface of a support substrate via a conductive film, removing the donor substrate from the bonded subst…
Who is the assignee on this patent?
Shinetsu Chemical Co, National Univ Corporation Toyohashi Univ Of Technology
What technology area does this patent fall under?
Primary CPC classification H10P95/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Oct 10 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).