Plating method and plating apparatus

Patent metadata

Field	Value
Publication number	US-2024309511-A1
Application number	US-202218263435-A
Country	US
Kind code	A1
Filing date	Jan 20, 2022
Priority date	Feb 3, 2021
Publication date	Sep 19, 2024
Grant date	—

Abstract

A plating method includes a preparation process; a first plating process; and a second plating process. In the preparation process, a substrate W having a seed layer 132 of cobalt or a cobalt alloy formed in a recess is prepared. In the first plating process, a displacement plating processing is performed on the substrate W to replace a surface layer of the seed layer 132 with copper by using a first plating liquid L 1 containing a copper ion. In the second plating process, after the first plating process, a reduction plating processing is performed on the recess of the substrate W by using a second plating liquid L 2 containing a copper ion and a reducing agent.

First claim

1 . A plating method, comprising:
preparing a substrate having a seed layer of cobalt or a cobalt alloy formed in a recess; performing a displacement plating processing on the substrate to replace a surface layer of the seed layer with copper by using a first plating liquid containing a copper ion; performing, after the performing of the displacement plating processing, a reduction plating processing on the recess of the substrate by using a second plating liquid containing the copper ion and a reducing agent.

2 . The plating method of claim 1 ,
wherein the performing of the reduction plating processing is performed by using the second plating liquid which is produced by mixing the first plating liquid containing the reducing agent in a proportion smaller than a preset value and a third plating liquid containing the reducing agent in a proportion larger than that of the first plating liquid.

3 . The plating method of claim 1 ,
wherein the first plating liquid contains no reducing agent.

4 . The plating method of claim 1 ,
wherein the performing of the reduction plating processing is performed on the substrate wet with the first plating liquid.

5 . The plating method of claim 1 ,
wherein the seed layer is formed by a CVD method.

6 . The plating method of claim 1 ,
wherein the seed layer has a thickness equal to or larger than 1 nm.

7 . The plating method of claim 1 ,
wherein the second plating liquid has a temperature higher than that of the first plating liquid.

8 . A plating apparatus, comprising:
a substrate holder configured to hold a substrate rotatably; a chemical liquid supply configured to supply a chemical liquid to the substrate; and a controller configured to control the substrate holder and the chemical liquid supply, wherein the controller holds, with the substrate holder, the substrate having a seed layer of cobalt or a cobalt alloy formed in a recess, the controller performs, by using a first plating liquid containing a copper ion, a displacement plating processing on the substrate to replace a surface layer of the seed layer with copper, and the controller performs, after the displacement plating processing, a reduction plating processing on the recess of the substrate by using a second plating liquid containing the copper ion and a reducing agent.

9 . The plating apparatus of claim 8 ,
wherein the chemical liquid supply is configured to supply, onto the substrate, the first plating liquid containing the reducing agent in a proportion smaller than a preset value and a third plating liquid containing the reducing agent in a proportion larger than that of the first plating liquid, and the controller performs the reduction plating processing by using the second plating liquid which is produced by mixing the first plating liquid and the third plating liquid on the substrate.

10 . The plating apparatus of claim 8 ,
wherein the controller controls a rotation speed of the substrate to 1000 rpm or less while performing the displacement plating processing.

11 . The plating apparatus of claim 8 ,
wherein the controller controls a rotation speed of the substrate to 100 rpm or less while performing the reduction plating processing.

Assignees

• Tokyo Electron Ltd

Inventors

• Nagao Takeshi
• Inatomi Yuichiro
• IWAI Kazutoshi

Classifications

• H10P14/46 Primary

  using a liquid · CPC title

• H10W20/031

  of conductive parts of the interconnections · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/033

  in openings in dielectrics · CPC title