Aluminum member for semiconductor manufacturing apparatuses, and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2024287700-A1
Application number	US-202218574166-A
Country	US
Kind code	A1
Filing date	Sep 1, 2022
Priority date	Sep 6, 2021
Publication date	Aug 29, 2024
Grant date	—

Abstract

An aluminum member for semiconductor manufacturing apparatuses (1) includes: a base material (2), which is composed of aluminum or aluminum alloy; and an anodized coating (3), which is formed on the base material (2). Heterogenous particles (31), which contain a metal atom or metal atoms other than Al atoms and the major-axis diameters of which are 0.1 μm or more and 15 μm or less, exist in the anodized coating (3). A method of manufacturing the aluminum member for semiconductor manufacturing apparatuses (1) includes an anodizing-process step, in which the anodized coating (3), which contains the heterogenous particles (31), is formed on the base material (2) by performing an anodizing process, using an acidic electrolytic solution, on the base material (2) having second-phase particles in the Al parent phase.

First claim

1 . An aluminum member for semiconductor manufacturing apparatuses comprising:
a base material composed of aluminum or an aluminum alloy; and an anodized coating formed on the base material; wherein the anodized coating comprises heterogenous particles, which contain one or more metal atoms other than Al atoms and have major-axis diameters of 0.1 μm or more and 15 μm or less, exist in the anodized coating.

2 . The aluminum member for semiconductor manufacturing apparatuses according to claim 1 , wherein the average of the major-axis diameters of the heterogenous particles is 0.1 μm or more and 15 μm or less.

3 . The aluminum member for semiconductor manufacturing apparatuses according to claim 1 , wherein the number of heterogenous particles per 1 mm 2 of surface area of the anodized coating is 1,600 or more.

4 . The aluminum member for semiconductor manufacturing apparatuses according to claim 1 , wherein, in an arbitrary cross section of the aluminum member, the spacing between a first one of the heterogenous particles and a second one of the heterogenous particles that is closest to the first one of the heterogenous particles is 25 μm or less.

5 . The aluminum member for semiconductor manufacturing apparatuses according to claim 1 , wherein the one or more metal atoms of the heterogenous particles other than Al atoms is Si atoms.

6 . The aluminum member for semiconductor manufacturing apparatuses according to claim 1 , wherein the base material is constituted from a 5000-series aluminum alloy or a 6000-series aluminum alloy.

7 . A method of manufacturing the aluminum member for semiconductor manufacturing apparatuses according to claim 1 , comprising an anodizing-process step, in which the anodized coating, which contains the heterogenous particles, is formed on the base material by performing an anodizing process, using an acidic electrolytic solution, on the base material having second-phase particles in the Al parent phase.

8 . The method of manufacturing the aluminum member for semiconductor manufacturing apparatuses according to claim 7 , further comprising:
a casting step, in which an ingot composed of aluminum or an aluminum alloy is manufactured; a homogenizing-process step, in which a homogenizing process is performed by holding the ingot for 5 hours or more and 10 hours or less at a temperature of 500° C. or higher and 560° C. or lower; and a hot-rolling step, in which the base material is manufactured by performing hot rolling on the ingot, on which the homogenizing process has been performed, in the state in which the temperature thereof is 500° C. or higher and 560° C. or lower.

9 . The aluminum member for semiconductor manufacturing apparatuses according to claim 2 , wherein the number of heterogenous particles per 1 mm 2 of surface area of the anodized coating is 1,600 or more.

10 . The aluminum member for semiconductor manufacturing apparatuses according to claim 9 , wherein, in an arbitrary cross section of the aluminum member, the spacing between a first one of the heterogenous particles and a second one of the heterogenous particles that is closest to the first one of the heterogenous particles is 25 μm or less.

11 . The aluminum member for semiconductor manufacturing apparatuses according to claim 10 , wherein the one or more metal atoms of the heterogenous particles other than Al atoms is Si atoms.

12 . The aluminum member for semiconductor manufacturing apparatuses according to claim 11 , wherein the base material is constituted from a 5000-series aluminum alloy or a 6000-series aluminum alloy.

13 . The aluminum member for semiconductor manufacturing apparatuses according to claim 12 , wherein the base material contains 0.5-5.0 mass % Mg.

14 . The aluminum member for semiconductor manufacturing apparatuses according to claim 12 , wherein the base material contains 0.3-1.5 mass % Mg and 0.2-1.2 mass % Si.

15 . The aluminum member for semiconductor manufacturing apparatuses according to claim 12 , wherein the anodized coating has a thickness of 0.1-100 μm.

16 . The aluminum member for semiconductor manufacturing apparatuses according to claim 15 , wherein the average of the major-axis diameters of the heterogenous particles is 0.5-10 μm.

17 . A method of manufacturing the aluminum member according to claim 1 , comprising:
anodizing the base material containing the heterogenous particles in an acidic electrolytic solution to form the anodized coating, wherein the base material contains second-phase particles in the Al parent phase.

18 . The method according to claim 17 , wherein during the anodizing step an electric current density of 200-500 A/m 2 is applied and the acidic electrolytic solution is held at a temperature of 263-303 K.

19 . The method according to claim 18 , wherein prior to the anodizing step the base material is formed by:
casting an ingot composed of aluminum or an aluminum alloy; homogenizing the ingot by holding the ingot for 5-10 hours at a temperature of 500-560° C.; and hot rolling the homogenized ingot at a temperature of 500-560° C.

20 . The method according to claim 19 , wherein the ingot is constituted from a 5000-series aluminum alloy or a 6000-series aluminum alloy.

Assignees

• Uacj Corp

Inventors

• NUNOMURA Junji

Classifications

• C25D11/16

  Pretreatment {, e.g. desmutting} · CPC title

• C25D11/08

  containing inorganic acids · CPC title

• C25D15/00

  Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires · CPC title

• C25D11/06 Primary

  characterised by the electrolytes used · CPC title

• C22C21/08

  with silicon · CPC title