Method of fabricating a pellicle frame

Patent metadata

Field	Value
Publication number	US-9436077-B2
Application number	US-201313827542-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Sep 14, 2009
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

First claim

What is claimed is:

1. A method of fabricating a lithography apparatus, the method comprising:
preparing a main body of a pellicle frame that includes a first material layer including aluminum, the first material layer having a vent hole;
forming a second material layer on a surface of the first material layer of the pellicle frame using a wet process using wet oxidation plasma, the second material layer including aluminum oxide and a transition metal, the second material layer being formed on the first material layer such that the first material layer is completely enclosed by the second material layer excepting a sidewall of the vent hole; and
attaching a pellicle membrane to the pellicle frame having the second material layer with an adhesive layer interposed between the second material layer and the pellicle membrane.

2. The method as claimed in claim 1 , wherein forming the second material layer includes:
dipping the main body in an alkali electrolytic solution containing ions of the transition metal; and
generating the wet oxidation plasma in a periphery of the main body to form the second material layer including the aluminum oxide and the transition metal on the surface of the first material layer.

3. The method as claimed in claim 2 , wherein generating the wet oxidation plasma includes:
applying a positive current pulse to the main body; and
applying a negative current pulse to the alkali electrolytic solution.

4. The method as claimed in claim 1 , further comprising, after forming the second material layer, dipping the main body in deionized water.

5. The method as claimed in claim 4 , wherein the deionized water is maintained at a temperature of about 70° C. or higher.

6. The method as claimed in claim 1 , wherein the second material layer is formed to a thickness of about 5 to about 30 μm.

Assignees

• Samsung Electronics Co Ltd
• Fine Semitech Corp

Inventors

• Kim Jeong Jin
• An Bum Hyun
• Jeon Chan Uk
• Lee Han Shin
• Choi Jae Hyuck
• Kim Seung Wan
• Kim Ik Jun
• You Jang Dong

Classifications

• C25D11/18

  After-treatment, e.g. pore-sealing · CPC title

• C25D11/024 Primary

  Anodisation under pulsed or modulated current or potential · CPC title

• C25D11/04

  of aluminium or alloys based thereon · CPC title

• G03F1/142 Primary

  Physics · mapped topic

• Y10T428/1317

  Multilayer [continuous layer] · CPC title