Lamination apparatus and method

Patent metadata

Field	Value
Publication number	US-2024262096-A1
Application number	US-202318165933-A
Country	US
Kind code	A1
Filing date	Feb 8, 2023
Priority date	Feb 8, 2023
Publication date	Aug 8, 2024
Grant date	—

Abstract

A method for laminating a film to a wafer and apparatus for performing the lamination process are disclosed. The method includes providing the wafer and the film in a process chamber where the wafer and the film are separated from each other, achieving a vacuum state and a process temperature in the process chamber, and laminating the film to contact a surface of the wafer.

First claim

What is claimed is:

1 . A method for laminating a film to a wafer, comprising:
providing the wafer and the film in a process chamber, the wafer and the film being separated from each other; achieving a vacuum state and a process temperature in the process chamber; and laminating the film to a surface of the wafer.

2 . The method of claim 1 , wherein a contact interface between the film and the wafer is bubble-free.

3 . The method of claim 1 , wherein the film is free from generating wrinkles after being laminated to the wafer.

4 . The method of claim 1 , wherein the film includes a dielectric material or a molding material.

5 . The method of claim 1 , wherein the process temperature is in a range of about 100° C. to about 150° C.

6 . A method for performing a lamination process, comprising:
positioning a substrate at a first side of a chamber and positioning a process film at a second side of the chamber opposite to the first side, wherein the process film is positioned through a surface adhesion between the process film and a silicone rubber located at the second side of the chamber; obtaining an enclosed space in the chamber that is heated and vacuumed; and applying a pressure to the silicone rubber and the process film to press the process film against the substrate.

7 . The method of claim 6 , wherein a surface of the silicone rubber in contact with the process film has a surface roughness in a range of about 1 μm to about 10 μm.

8 . The method of claim 6 , wherein the silicone rubber includes an anti-electrostatic-type rubber, a room-temperature-vulcanizing rubber, or a fluororubber.

9 . The method of claim 6 , wherein the silicone rubber have a thickness of about 0.1 mm to about 5 mm.

10 . The method of claim 6 , wherein sidewalls of the process film are laterally offset inward from sidewalls of the substrate after the lamination process.

11 . The method of claim 6 , wherein applying the pressure to the silicone rubber and the process film includes actuating connecting rods located at the second side of the chamber to push down the process film.

12 . The method of claim 6 , further comprising pumping an air into the enclosed space of the chamber after the process film is pressed against the substrate.

13 . An apparatus for performing a lamination process, comprising:
a process chamber comprising an upper chamber, a lower chamber, and an inner space between the upper chamber and the lower chamber, the lower chamber operable to support a substrate and the upper chamber operable to carry a process film to be laminated on the substrate; and a silicone rubber configured to the upper chamber of the process chamber, wherein the process film is adhered to a flat and smooth surface of the silicone rubber.

14 . The apparatus of claim 13 , wherein the process film comprises a material film and a cover film on top of the material film, and the cover film is in physical contact with the silicone rubber.

15 . The apparatus of claim 13 , further comprising a presser mechanical coupled to the process chamber to supply pressure to press the process film onto the substrate.

16 . The apparatus of claim 15 , further comprising a heater thermally coupled to the process chamber to raise a temperature of the inner space of the process chamber.

17 . The apparatus of claim 16 , further comprising a vacuum pump fluidly coupled to the process chamber to generate a vacuum state within the inner space of the process chamber.

18 . The apparatus of claim 17 , wherein the lower chamber comprises a substrate pedestal to support the substrate, and a surface area of the substrate is smaller than that of the substrate pedestal.

19 . The apparatus of claim 13 , wherein the upper chamber comprises a jig in contact with the silicone rubber, and the jig is vertically moved in the process chamber during the lamination process.

20 . The apparatus of claim 19 , wherein the upper chamber further comprises a metal plate in contact with the silicone rubber and surrounded by the jig, and in a plan view, the metal plate has a circular shape and the jig has a ring shape.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Yu-Ting
• Huang Ying-Jui
• Hwang Chien-Ling
• Hsieh Ching-Hua

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W72/07337

  using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title

• H10W70/093

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title

• H10W70/09

  extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs · CPC title