Purge system to clean wafer backside for ring susceptor

Patent metadata

Field	Value
Publication number	US-2024258097-A1
Application number	US-202418418867-A
Country	US
Kind code	A1
Filing date	Jan 22, 2024
Priority date	Jan 26, 2023
Publication date	Aug 1, 2024
Grant date	—

Abstract

A method and apparatus for processing substrates applicable for use in semiconductor manufacturing. The method includes rotating a first shaft having a first perforation where at least a part of the first shaft is disposed within a second shaft. The method further includes flowing a gas through a piping, where the piping is coupled to a second perforation in the second shaft. The method also includes flowing the gas through the second perforation and the first perforation into an interior of the first shaft. The method further includes flowing the gas from the interior of the first shaft to an underside of a substrate disposed within a processing chamber.

First claim

1 . An apparatus applicable for use in semiconductor manufacturing, comprising:
a first shaft having a first perforation; a second shaft having a second perforation, wherein at least a portion of the first shaft is disposed inside of the second shaft and the first shaft is rotatable with respect to the second shaft; a support frame coupled to an end of the first shaft; and a cassette disposed above the support frame, wherein the first perforation and the second perforation are configured to allow passage of a gas through the first perforation and the second perforation when the first shaft is rotated, wherein the first shaft is configured such that the gas is flowable through an interior of the first shaft to contact an underside of a substrate disposed on the cassette.

2 . The apparatus of claim 1 , wherein the first perforation is a first plurality of perforations and the second perforation is a second plurality of perforations, wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the gas into the interior of the first shaft.

3 . The apparatus of claim 1 , wherein the first perforation is at a first angle relative to a surface of the first shaft and the second perforation are at a second angle relative to a surface of the second shaft, wherein the first angle and the second angle are between 0° and 90°.

4 . The apparatus of claim 1 , further comprising a connection between the second perforation and a gas source.

5 . The apparatus of claim 4 , wherein the connection is permanent piping or semi-permanent piping.

6 . A method of processing substrates applicable for use in semiconductor manufacturing, comprising:
rotating a first shaft having a first perforation wherein at least a part of the first shaft is disposed within a second shaft; flowing a gas through a piping, wherein the piping is coupled to a second perforation in the second shaft; flowing the gas through the second perforation and the first perforation into an interior of the first shaft; and flowing the gas from the interior of the first shaft to an underside of a substrate disposed within a processing chamber.

7 . The method of claim 6 , wherein the substrate is disposed on a cassette.

8 . The method of claim 6 , wherein the first perforation is a first plurality of perforations and the second perforation is a second plurality of perforations, wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the gas into the interior of the first shaft.

9 . The method of claim 6 , wherein the gas is a cleaning gas, a purge gas, or a combination thereof.

10 . The method of claim 6 , further comprising flowing a second gas through a process gas inlet.

11 . The method of claim 10 , wherein the second gas is a cleaning gas.

12 . The method of claim 11 , wherein the flowing the second gas occurs after the flowing the gas through the interior of the first shaft to the underside of the substrate is completed.

13 . The method of claim 6 , further comprising exhausting the gas through an exhaust outlet.

14 . A method of processing substrates applicable for use in semiconductor manufacturing, comprising:
heating a substrate positioned above a substrate support; flowing one or more process gases over the substrate to form one or more layers on the substrate; rotating a first shaft having a first perforation wherein at least a part of the first shaft is disposed within a second shaft; flowing a cleaning gas through a connection, wherein the connection is coupled to a second perforation in the second shaft; flowing the cleaning gas through the second perforation and the first perforation into an interior of the first shaft; and flowing the cleaning gas from the interior of the first shaft to an underside of a substrate disposed within a processing chamber.

15 . The method of claim 14 , wherein the substrate is disposed on a cassette and the cassette is disposed on the substrate support.

16 . The method of claim 14 , wherein the first perforation is a first plurality of perforations and the second perforation is a second plurality of perforations, wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the cleaning gas into the interior of the first shaft.

17 . The method of claim 14 , wherein the cleaning gas is an etchant gas, a purge gas, or a combination thereof.

18 . The method of claim 14 , wherein at least a part of the flowing the one or more process gases is completed prior to the flowing the cleaning gas through the connection.

19 . The method of claim 14 , wherein the flowing the one or more process gases is completed prior to the flowing the cleaning gas through the connection.

20 . The method of claim 14 , further comprising exhausting the cleaning gas through an exhaust outlet.

Assignees

• Applied Materials Inc

Inventors

• Patil Aniketnitin

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/56 Primary

  Cleaning of wafer backside · CPC title

• H10P72/7626 Primary

  characterised by the construction of the shaft · CPC title

• H10P72/7621 Primary

  characterised by supporting two or more semiconductor substrates · CPC title

• C30B25/14

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title